Abstract
Carbon nanotube field-effect transistors have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. In order to account for the ballistic transport we solved the coupled Poisson and Schrödinger equations for the analysis of these devices. Conventionally the coupled Schrödinger-Poisson equation is solved iteratively with appropriate numerical damping. Often convergence problems occur. In this work we show that this problem is due to inappropriate energy discretization, and by using an adaptive integration method the simulation time is reduced and most of the simulations converge in a few iterations. Based on this approach we investigated the static and dynamic behavior of carbon nanotube field effect transistors.
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Pourfath, M., Kosina, H. (2006). Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors. In: Lirkov, I., Margenov, S., Waśniewski, J. (eds) Large-Scale Scientific Computing. LSSC 2005. Lecture Notes in Computer Science, vol 3743. Springer, Berlin, Heidelberg. https://doi.org/10.1007/11666806_66
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DOI: https://doi.org/10.1007/11666806_66
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31994-8
Online ISBN: 978-3-540-31995-5
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