Optoelectronic-VLSI Technology: Terabit/s I/O to a VLSI Chip

Abstract

The concept of a manufacturable technology that can provide parallel optical interconnects directly to a VLSI circuit, proposed over 15 years ago in [1], now appears to be a reality. One such optoelectronic-VLSI (OE-VLSI) technology is based on the hybrid flip-chip area-bonding of GaAs/AlGaAs Multiple-Quantum Well (MQW) electro-absorption modulator devices directly onto active silicon CMOS circuits. The technology has reached the point where batch-fabricated foundry shuttle incorporating multiple OE-VLSI chip designs are now being run [2]. These foundry shuttles represent the first delivery of custom-designed CMOS VLSI chips with surface-normal optical I/O technology. From a systems point of view, this represents an important step towards the entry of optical interconnects in that: the silicon integrated circuit is state-of-the-art; the circuit is unaffected by the integration process; and the architecture, design, and optimization of the chip can proceed independently of the placement and bonding to the optical I/O.