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International Workshop on Power and Timing Modeling, Optimization and Simulation

PATMOS 2002: Integrated Circuit Design. Power and Timing Modeling, Optimization and Simulation pp 300–313Cite as

Trends in Ultralow-Voltage RAM Technology

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Part of the book series: Lecture Notes in Computer Science ((LNCS,volume 2451))

Abstract

This paper describes ultralow-voltage RAM technology for standalone and embedded memories in terms of signal-to-noise-ratio designs of RAM cells and subthreshold-current reduction. First, structures and areas of current DRAM and SRAM cells are discussed. Next, low-voltage peripheral circuits that have been proposed so far are reviewed with focus on subthreshold-current reduction, speed variation, on-chip voltage conversion, and testing. Finally, based on the above discussion, a perspective is given with emphasis on needs for high-speed simple non-volatile RAMs, new devices/circuits for reducing active- mode leakage currents, and memory-rich SOC architectures.

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Author information

Authors and Affiliations

  1. Central Research Laboratory, Hitachi Ltd., Kokubunji, 185-8601, Tokyo, Japan

    Kiyoo Itoh

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  1. Kiyoo Itoh
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Editors and Affiliations

  1. Ecole d’Ingénieurs du Canton de Vaud Microelectronics and Systems Institute, Digital Communications Team, Swiss University of Applied Science, Rue de Galilée 15, 1400, Yverdon, Switzerland

    Bertrand Hochet

  2. Instituto de Microelectrónica de Sevilla-CNM-CSIC Departamento do Diseño Digital Departamento de Electrónica y Electromagnetismo Departamento de Tecnología Electrónica, Universidad de Sevilla, Avda. Reina Mercedes, s/n. Edif. CICA

    Antonio J. Acosta  & Manuel J. Bellido  & 

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© 2002 Springer-Verlag Berlin Heidelberg

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Itoh, K. (2002). Trends in Ultralow-Voltage RAM Technology. In: Hochet, B., Acosta, A.J., Bellido, M.J. (eds) Integrated Circuit Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2002. Lecture Notes in Computer Science, vol 2451. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45716-X_30

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  • DOI: https://doi.org/10.1007/3-540-45716-X_30

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-44143-4

  • Online ISBN: 978-3-540-45716-9

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