Abstract
This article presents the design of a GaN-only robust low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) integrated with a reverse recovery time compensation (RRTC) circuit at the input. We use the \(\mathbf {0.25\,\mu m}\) GaN HEMT process from UMS in the complete design of robust LNA MMIC in the 5.8–6.2 GHz band. The proposed MMIC design is compact and requires a single substrate to fabricate LNA and RRTC circuits. To test the design, we apply a high power RF pulse of 40 dBm for 250 nsec and achieve a 16.8 dB reduction in gain \(S_{21}\) with an RRT limiter circuit in place. The simulated LNA takes less than 100 nsec to get back to its normal operating condition after applying a wideband (4–10 GHz) and high power (10–40 dBm) RF pulse for 250 nsec.
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References
Aamir Ahsan, S., Ghosh, S., Khandelwal, S., Chauhan, Y.S.: Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow. IEEE J. Electron Devices Soc. 5(5), 310–319 (2017). https://doi.org/10.1109/JEDS.2017.2724839
Aamir Ahsan, S., Ghosh, S., Sharma, K., Dasgupta, A., Khandelwal, S., Chauhan, Y.S.: Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior. IEEE Trans. Electron Devices 63(2), 565–572 (2016). https://doi.org/10.1109/TED.2015.2504726
Andrei, C., Bengtsson, O., Doerner, R., Chevtchenko, S.A., Heinrich, W., Rudolph, M.: Dynamic behaviour of a low-noise amplifier GAN MMIC under inputpower overdrive. In: 2015 European Microwave Conference (EuMC), pp. 231–234 (2015). https://doi.org/10.1109/EuMC.2015.7345742
Bahl, I.: Matching network components, chap. 6, pp. 125–148 John Wiley Sons, Ltd (2009). https://doi.org/10.1002/9780470462348.ch6. https://onlinelibrary.wiley.com/doi/abs/10.1002/9780470462348.ch6
Bajpai, N., Chauhan, Y.S.: A broadband power amplifier MMIC to compensate the frequency dependent behaviour. In: 2021 IEEE MTT-S International Microwave and RF Conference (IMaRC), pp. 1–4 (2021). https://doi.org/10.1109/IMaRC49196.2021.9714648
Bajpai, N., Pampori, A., Maity, P., Shah, M., Das, A., Chauhan, Y.S.: A low noise power amplifier MMIC to mitigate co-site interference in 5G front end modules. IEEE Access 9, 124900–124909 (2021). https://doi.org/10.1109/ACCESS.2021.3108596
Bera, S.C.: Microwave Active Devices and Circuits for Communication. LNEE, vol. 533. Springer, Singapore (2019). https://doi.org/10.1007/978-981-13-3004-9
Bettidi, A., et al.: X-band T/R module in state-of-the-art GAN technology. In: 2009 European Radar Conference (EuRAD), pp. 258–261 (2009)
Chaturvedi, S., Badnikar, S.L., Naik, A.A.: Ultra wideband receiver protection limiter using 0.13\(\mu \)m pHEMT technology. In: IEEE MTT-S International Microwave and RF Conference (2017). ISBN: 978-1-586-120-717/31.00
Cui, L., Zhou, X., Li, Y.P., Wei, H.T.: Codesign of 12–22 GHz integrated pin-diode limiter and low noise amplifier. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1–3 (2018). https://doi.org/10.1109/ICSICT.2018.8564886
Dasgupta, A., Chauhan, Y.S.: Modeling of induced gate thermal noise in HEMTs. IEEE Microwave Wirel. Compon. Lett. 26(6), 428–430 (2016). https://doi.org/10.1109/LMWC.2016.2562642
ETSI: TS 138 521-2 - V15.3.0 - 5G; NR; User Equipment (UE) conformance specification; Radio transmission and reception; Part 2: Range 2 standalone (3GPP TS 38.521-2 version 15.3.0 Release 15). 3GPP TS 38.101-1 version 15.2.0 Release 15 15.3.0, 1–72 (2018). https://portal.etsi.org/TB/ETSIDeliverableStatus.aspx
Ghosh, S., Dasgupta, A., Khandelwal, S., Agnihotri, S., Chauhan, Y.S.: Surface-potential-based compact modeling of gate current in ALGaN/GaN HEMTs. IEEE Trans. Electron Devices 62(2), 443–448 (2015). https://doi.org/10.1109/TED.2014.2360420
van Heijningen, M., et al.: C-band single-chip radar front-end in ALGaN/GaN technology. IEEE Trans. Microw. Theory Tech. 65(11), 4428–4437 (2017). https://doi.org/10.1109/TMTT.2017.2688438
Huang, T., Axelsson, O., Bergsten, J., Thorsell, M., Rorsman, N.: Achieving low-recovery time in ALGaN/GaN HEMTs with AlN interlayer under low- noise amplifiers operation. IEEE Electron Device Lett. 38(7), 926–928 (2017). https://doi.org/10.1109/LED.2017.2709751
Huang, T., Axelsson, O., Bergsten, J., Thorsell, M., Rorsman, N.: Impact of ALGaN/GaN interface and passivation on the robustness of low-noise amplifiers. IEEE Trans. Electron Devices 67(6), 2297–2303 (2020). https://doi.org/10.1109/TED.2020.2986806
Liero, A., Dewitz, M., kuhn, S., Chaturvedi, N., Xu, J., Rudolph, M.: On the recovery time of highly robust low-noise amplifiers. IEEE Trans. Microw. Theory Tech. 58(4), 781–787 (2010). https://doi.org/10.1109/TMTT.2010.2041519
Lim, C.L.: Recovery time of the schottky-pin limiter. Microw. J. 55(11), 66–72(2012)
Looney, J., Conway, D., Bahl, I.: An examination of recovery time of an integrated limiter/LNA. IEEE Microwave Mag. 5(1), 83–86 (2004). https://doi.org/10.1109/MMW.2004.1284947
Provost, Z.O., et al.: High robustness S-band GaN based LNA. In: 2019 14th European Microwave Integrated Circuits Conference (EuMIC), pp. 243–246 (2019). https://doi.org/10.23919/EuMIC.2019.8909569
Schuh, P., Sledzik, H., Reber, R.: Gan-based single-chip frontend for next-generation x-band AESA systems. Int. J. Microw. Wirel. Technol. 10(5–6), 660–665 (2018). https://doi.org/10.1017/S1759078718000557
Suijker, E.M., et al.: Robust ALGaN/GaN low noise amplifier MMICs for c-, ku- and ka-band space applications. In: 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, pp. 1–4 (2009). https://doi.org/10.1109/csics.2009.5315640
Sun, M., Lu, Y., Huai, Y.: Low capacitance ESD protection circuits for GaAs RF ICs. J. Electrostat. 65(3), 189–199 (2007). https://doi.org/10.1016/j.elstat.2006.07.016
Wanum, M., Vliet, F.: A 58-dBm S-band, pp. 3034–3042 (08 2013)
Yagbasan, C., Aktug, A.: Robust x-band GaN LNA with integrated active limiter. In: 2018 48th European Microwave Conference (EuMC), pp. 1205–1208 (2018). https://doi.org/10.23919/EuMC.2018.8541779
Yagbasan, C., Aktuğ, A.: Robust x-band GaN LNA with integrated active limiter. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), pp. 237–240 (2018). https://doi.org/10.23919/EuMIC.2018.8539928
Acknowledgement
The work was funded in part by the IUSSTF/USISTEF/9th call/EC-059/2018/2019–20, SwarnaJayanti Fellowship under Grant DST/SJF/ETA-02/2017–18 and in part by the FIST Scheme of the Department of Science and Technology under Grant SR/FST/ETII-072/2016.
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Bajpai, N., Chauhan, Y.S. (2022). A GaN Based Reverse Recovery Time Limiter Circuit Integrated with a Low Noise Amplifier. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_19
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