Abstract
An asynchronous CA model of annihilation of electrons and holes in an inhomogeneous semiconductor is presented. The model is based on the Monte Carlo algorithm of electron-hole annihilation. CA model allows us to study the dynamics of electron-hole spatial distribution. The annihilation process is simulated for different values of the modeling parameters. The spatial distributions of particles are analyzed. It is found out that a segregation, i.e., a spatial separation of electron and hole clusters occurs. This happens under certain conditions on the diffusion and tunneling rates. In addition, the parallel implementation of the CA model of the annihilation is performed using OpenMP standard. The parallel implementation makes it possible to perform averaging over a rich ensemble of initial distributions of particles.
Supported by Russian Science Foundation under Grant 14-11-00083.
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Kireeva, A.E., Sabelfeld, K.K. (2015). Cellular Automata Model of Electrons and Holes Annihilation in an Inhomogeneous Semiconductor. In: Malyshkin, V. (eds) Parallel Computing Technologies. PaCT 2015. Lecture Notes in Computer Science(), vol 9251. Springer, Cham. https://doi.org/10.1007/978-3-319-21909-7_18
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DOI: https://doi.org/10.1007/978-3-319-21909-7_18
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