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Discretization of the Drift-Diffusion Equations with the Composite Discontinuous Galerkin Method

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Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 9574))

Abstract

We present three variants of discretization of the stationary van Roosbroeck equations. They are the Composite Discontinuous Galerkin Methods, in standard symmetric/non-symmetric version, and the Weakly Over-Penalized Symmetric Interior Penalty method.

Numerical simulations of gallium nitride semiconductor devices are presented. Results of these simulations serve as a base to perform the convergence analysis of the presented methods. Errors of approximations obtained with these methods are compared with each other.

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References

  1. Selberherr, S.: Analysis and Simulation of Semiconductor Devices. Springer, Wien (1984)

    Book  Google Scholar 

  2. Markowich, P.A., Ringhofer, C.A., Schmeiser, C.: Semiconductor Equations. Springer, Wien (1990)

    Book  MATH  Google Scholar 

  3. Riviere, B.: Discontinuous Galerkin Methods for Solving Elliptic and Parabolic Equations: Theory and Implementation. Society for Industrial and Applied Mathematics, Philadelphia (2008)

    Book  MATH  Google Scholar 

  4. Arnold, D.N., Brezzi, F., Cockburn, B., Marini, L.D.: Unified analysis of discontinuous Galerkin methods for elliptic problems. SIAM J. Numer. Anal. 39(5), 1749–1779 (2001)

    Article  MathSciNet  MATH  Google Scholar 

  5. Dryja, M.: On discontinuous Galerkin methods for elliptic problems with discontinuous coefficients. Comput. Methods Appl. Math. 3(1), 76–85 (2003)

    Article  MathSciNet  MATH  Google Scholar 

  6. Brenner, S., Scott, R.: The Mathematical Theory of Finite Element Methods. Springer, New York (2008)

    Book  MATH  Google Scholar 

  7. Sze, S., Ng, K.: Physics of Semiconductor Devices. Wiley-Interscience, Berlin (2006)

    Book  Google Scholar 

  8. Jerome, J.W.: The approximation problem for Drift-Diffusion systems. SIAM Rev. 37(4), 552–572 (2012)

    Article  MathSciNet  MATH  Google Scholar 

  9. Ciarlet, P.G.: The Finite Element Method for Elliptic Problems. North-Holland Publishing Company, Amsterdam (1978)

    MATH  Google Scholar 

  10. Brenner, S.C., Owens, L., Sung, L.Y.: A weakly over-penalized symmetric interior penalty method. Electron. Trans. Numer. Anal. 30, 107–127 (2008)

    MathSciNet  MATH  Google Scholar 

  11. Jerome, J.W.: Analysis of Charge Transport. Springer, Berlin (1996)

    Book  Google Scholar 

  12. Jerome, J.W.: Consistency of semiconductor modeling: an existence/stability analysis for the stationary van Roosbroeck system. SIAM J. Appl. Math. 45(4), 565–590 (1985)

    Article  MathSciNet  MATH  Google Scholar 

  13. Girault, V., Riviere, B., Wheeler, M.F.: A discontinuous Galerkin method with nonoverlapping domain decomposition for the stokes and Navier-Stokes problems. Math. Comput. 74(249), 53–84 (2005)

    Article  MathSciNet  MATH  Google Scholar 

  14. Sakowski, K., Marcinkowski, L., Krukowski, S.: Modification of the Newton’s method for the simulations of gallium nitride semiconductor devices. In: Wyrzykowski, R., Dongarra, J., Karczewski, K., Waśniewski, J. (eds.) PPAM 2013, Part II. LNCS, vol. 8385, pp. 551–560. Springer, Heidelberg (2014)

    Chapter  Google Scholar 

  15. Sakowski, K., Marcinkowski, L., Krukowski, S., Grzanka, S., Litwin-Staszewska, E.: Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes. J. Appl. Phys. 111(12), 123115 (2012)

    Article  Google Scholar 

  16. Polak, S.J., den Heijer, C., Schilders, W.H.A., Markowich, P.: Semiconductor device modelling from the numerical point of view. J. Numer. Methods Eng. 24, 763–838 (1987)

    Article  MATH  Google Scholar 

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Acknowledgements

The research was funded by Polish National Science Center on the basis of the decision DEC-2011/03/D/ST3/02071.

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Correspondence to Konrad Sakowski .

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Sakowski, K., Marcinkowski, L., Strak, P., Kempisty, P., Krukowski, S. (2016). Discretization of the Drift-Diffusion Equations with the Composite Discontinuous Galerkin Method. In: Wyrzykowski, R., Deelman, E., Dongarra, J., Karczewski, K., Kitowski, J., Wiatr, K. (eds) Parallel Processing and Applied Mathematics. Lecture Notes in Computer Science(), vol 9574. Springer, Cham. https://doi.org/10.1007/978-3-319-32152-3_37

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  • DOI: https://doi.org/10.1007/978-3-319-32152-3_37

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-32151-6

  • Online ISBN: 978-3-319-32152-3

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