Skip to main content

Hazardous Gases Sensing: Influence of Ionizing Radiation on Hydrogen Sensors

  • Conference paper
  • First Online:
Internet of Things. IoT Infrastructures (IoT360 2015)

Abstract

The electron irradiation effect on characteristics of the hydrogen sensors based on metal-insulator-semiconductor transistor structures has been investigated by experiment. The models of hydrogen and radiation sensitivity were developed. Using these models the forecast of functional performance of the hydrogen sensors under ionizing radiation and the estimation of critical doses has been done.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Voronov, Y.A., Kovalenko, A.V., Nikiforova, M.Y., Podlepetsky, B.I., Samotaev, N.N., Vasiliev, A.A.: Elements of gas sensors based on micro-fabrication technology. Datch. Sist. 3, 28–36 (2010)

    Google Scholar 

  2. Podlepetsky, B.I., Gumenjuk, S.V., Fomenko, S.: Sensitivity and stability of the integrated hydrogen sensors based on PD-resistor and MIS-FETs with various gate and insulator materials. In: Proceedings of Eurosensors X, 8–11 September 1996, Leuven, Belgium, vol. 3, pp. 637–640 (1996)

    Google Scholar 

  3. Lundström, I., Sundgren, H., Winquist, F., Eriksson, M., Krants-Rülcker, C., Lloyd-Spets, A.: Twenty-five years of field effect gas sensor research in Linköping. Sens. Actuators, B. 121, 247–262 (2007)

    Article  Google Scholar 

  4. Lundström, I.: Hydrogen sensitive MOS-structures, part I: principles and applications. Sens. Actuators 1, 423–426 (1981)

    Article  Google Scholar 

  5. Lundström, I., Armgarth, M., Spetz, A., Winquist, F.: Gas sensors based on catalytic metal-gate field-effect devices. Sens. Actuators 3–4, 399–421 (1986)

    Article  Google Scholar 

  6. Fomenko, S., Gumenjuk, S., Podlepetsky, B., Chuvashov, V., Safronkin, G.: The influence of technological factors on hydrogen sensitivity of MOSFET sensors. Sens. Actuators, B 10, 7–10 (1992)

    Article  Google Scholar 

  7. Podlepetsky, B.I.: Influence of ionizing radiation to characteristics of integral hydrogen sensors with MIS-transistor sensitive elements. Datch. Sist. 6, 35–41 (2011)

    Google Scholar 

  8. Ma, T.P., Dressendorfer, P.V. (eds.): Ionizing Radiation Effects in MOS Devices and Circuits. Willey, New York (1989)

    Google Scholar 

  9. Podlepetsky, B., Kovalenko, A.: Influence of ionizing radiation on MISFET hydrogen sensors. In: 15th International Meeting on Chemical Sensors, IMCS2014, Buenos Aires, MPS-T8-3, p. 113, March 2014

    Google Scholar 

  10. Podlepetsky, B.I.: Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics. Autom. Remote Control 76(3), 535–547 (2015). doi:10.1134/S0005117915030170

    Article  MATH  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2016 ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering

About this paper

Cite this paper

Podlepetsky, B., Samotaev, N. (2016). Hazardous Gases Sensing: Influence of Ionizing Radiation on Hydrogen Sensors. In: Mandler, B., et al. Internet of Things. IoT Infrastructures. IoT360 2015. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 170. Springer, Cham. https://doi.org/10.1007/978-3-319-47075-7_26

Download citation

  • DOI: https://doi.org/10.1007/978-3-319-47075-7_26

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-47074-0

  • Online ISBN: 978-3-319-47075-7

  • eBook Packages: Computer ScienceComputer Science (R0)

Publish with us

Policies and ethics