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International Conference on Applications in Electronics Pervading Industry, Environment and Society

ApplePies 2016: Applications in Electronics Pervading Industry, Environment and Society pp 27–33Cite as

Low Dose-Rate, High Total Dose Set-Up for Rad-Hard CMOS I/O Circuits Testing

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 429))

Abstract

In this paper, the planning of low dose-rate, high total dose testing campaign for I/O circuits is reported. In particular, the paper describes all development steps, starting from the rad-hard I/O circuits design and the implementation of the test-chip, which is meant to allow comparative testing between rad-hard and standard devices. The designed experimental setup permits in situ measurements, therefore the circuits behavior can be remotely monitored for very long periods. This feature enables low dose-rate testing up to very high dose.

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Acknowledgements

This work was supported by the European Union’s H2020 research and innovation programme under grant agreement No 640,073.

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Authors and Affiliations

  1. DIMES-Università della Calabria, Via P. Bucci 42C, 87036, Rende, Italy

    Calogero Pace, Letizia Fragomeni, Andrea Solano, Nicolò Marchese & Daniela Fiore

  2. DEIM-Università di Palermo, Viale delle Scienze Ed.9, 90128, Palermo, Italy

    Aldo Parlato

Authors
  1. Calogero Pace
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  2. Letizia Fragomeni
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  3. Aldo Parlato
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  4. Andrea Solano
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  5. Nicolò Marchese
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  6. Daniela Fiore
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Corresponding author

Correspondence to Calogero Pace .

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Editors and Affiliations

  1. University of Genova , Genova, Italy

    Alessandro De Gloria

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© 2018 Springer International Publishing AG

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Pace, C., Fragomeni, L., Parlato, A., Solano, A., Marchese, N., Fiore, D. (2018). Low Dose-Rate, High Total Dose Set-Up for Rad-Hard CMOS I/O Circuits Testing. In: De Gloria, A. (eds) Applications in Electronics Pervading Industry, Environment and Society. ApplePies 2016. Lecture Notes in Electrical Engineering, vol 429. Springer, Cham. https://doi.org/10.1007/978-3-319-55071-8_4

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  • DOI: https://doi.org/10.1007/978-3-319-55071-8_4

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-55070-1

  • Online ISBN: 978-3-319-55071-8

  • eBook Packages: EngineeringEngineering (R0)

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