Abstract
With the development of integrated circuit, SoC systems are more and more used in products. Memory is an important part of SoC, SRAM design is a key research area. In this paper, based on ASIC design methodology, 2 K-bits SRAM is designed. A 6T-SRAM memory cell is designed and simulated with circuit level to improve reliability. The memory cell is used to construct the storage array, which are the word line 32 bits and the bit line 8 bits. Then, the SRAM peripheral circuit is designed and simulated by using SMIC 0.18 μm process, including the data input/output buffer circuit, clock circuit, address decoding circuit, data read/write circuit and sense amplifier. The structure, function and performance of latch type sense amplifier are analyzed emphatically. The simulation results demonstrate that the function of SRAM is verified correctly. The clock frequency of the SRAM can reach 100 MHz.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Woo-oh, T., Jeong, H., Kang, K.: Power-Gated 9T SRAM cell for low-energy operation. IEEE Trans. Very Large Scale Integr. VLSI Syst. 7, 1–5 (2016)
Wang, B., Li, Q., Kim, T.T.: Read bitline sensing and fast local write-back techniques in hierarchical bitline architecture for ultralow-voltage SRAMs. IEEE Trans. Very Large Scale Integr. Syst. 4, 2156–2173 (2016)
Wu, S.L., Li, K.Y., Huang, P.T.: A 0.5 V 28 nm 256-kb Mini-array based 6T SRAM with Vtrip-Tracking write-assist. IEEE Trans. Circ. Syst.-I:Regul. Pap. 64, 1791–1793 (2017)
Seo, Y., Kwon, K.W., Fong, X.: High performance and energy-efficient on-chip cache using dual port (1R /1 W) spin-orbit torque MRAM 181–184. IEEE J. Emerg. Sel. Top. Circ. Syst. 3, 293–298 (2016)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering
About this paper
Cite this paper
Chen, Z., Cao, B. (2018). A 100 MHz SRAM Design in 180 nm Process. In: Gu, X., Liu, G., Li, B. (eds) Machine Learning and Intelligent Communications. MLICOM 2017. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 226. Springer, Cham. https://doi.org/10.1007/978-3-319-73564-1_53
Download citation
DOI: https://doi.org/10.1007/978-3-319-73564-1_53
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-73563-4
Online ISBN: 978-3-319-73564-1
eBook Packages: Computer ScienceComputer Science (R0)