Skip to main content

If It’s Pinched It’s a Memristor

  • Chapter
  • First Online:
Handbook of Memristor Networks

Abstract

This paper presents an in-depth review of the memristor from a rigorous circuit-theoretic perspective, independent of the material the device is made of. From an experimental perspective, a memristor is best defined as any 2-terminal device that exhibits a pinched hysteresis loop in the voltage-current plane when driven by any periodic voltage or current signal that elicits a periodic response of the same frequency. This definition greatly broadens the scope of memristive devices to encompass even non-semiconductor devices, both organic and inorganic, from many unrelated disciplines, including biology, botany, brain science, etc. For pedagogical reasons, the broad terrain of memristors is partitioned into 3 classes of increasing generality, dubbed Ideal Memristors, Generic Memristors, and Extended Memristors. Each class is distinguished from the others via unique fingerprints and signatures. This paper clarifies many confusing issues, such as non-volatility , DC V-I curves , high-frequency v-i curves, local activity, as well as nonlinear dynamical and bifurcation phenomena that are the hallmarks of memristive devices. Above all, this paper addresses several fundamental issues and questions that many memristor researchers do not comprehend but are afraid to ask.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 299.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 379.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Notes

  1. 1.

    A hysteresis loop is said to be pinched at the origin if it always passes through the origin at all time instants when the input signal waveform is zero. It follows that a pinched hysteresis loop can never intersect the vertical axis except at the origin. For some contrived input signal waveforms, such as Fig. 3 of [2], or for any periodic signal whose frequency tends to infinity (whereupon the area of the pinched hysteresis loop shrinks to zero) the resulting single-valued function in both cases can be interpreted as the limiting Lissajoux figure of a pinched hysteresis loop because for other periodic waveforms, or for moderate frequencies, a pinched hysteresis would emerge.

  2. 2.

    In 1813, Davy was honored and invited to give a lecture and demonstration of his great invention at the London Royal Institute. A picture of Sir Humphry Davy demonstrating his carbon-rod arc discharge lamp is shown in the upper part of Fig. 1c. The huge bank of Volta’s batteries is shown in the lower part of the picture.

  3. 3.

    Inspite of a raging war between England and France in 1807, Bonaparte Napoleon was so impressed by Davy’s numerous fundamental scientific contributions (including the discovery of the potassium and sodium elements, and the invention of the Carbon arc discharge lamp) that he had decided to award France’s most prestigious Prix Napoleon de Institut science prize to Sir Humphry Davy. To bypass the Naval blockade, Napoleon had sent a special courier to sneak into England and deliver to Davy a special diplomatic visa, along with a pouch of gold coins that would cover not only the cost of a luxurious travel between London and Paris for Davy and his wife (lady Jane), but also for a personal servant (who happened to be a young assistant of Davy named Faraday, the inventor of the “inductor”!) to carry their baggages.

  4. 4.

    This simple procedure was proposed by P. Georgiou from the Imperial College London [37].

  5. 5.

    Each lobe area is found by calculating the corresponding Stieltjes integral [41].

  6. 6.

    Diseases involving ion-channel malfunctions are called “Channelopathies” [45, 46]. They include certain forms of Epilepsy, Myotonia, Migraine, Diabetes, etc.

  7. 7.

    The same property can be easily shown to also apply for Extended Memristors.

  8. 8.

    Here we mean an “Ideal” Memristor. For a Generic Memristor, or an Extended Memristor, the preceding section shows that one generally measures a DC V-I curve as the DC voltage is tuned over any voltage interval that would not burnt-out the device.

  9. 9.

    Sgn(●) is the Signum function: \( \begin{array}{*{20}l} {{\text{Sgn}}\,\,\varphi = 1} \hfill & {\varphi > 0} \hfill \\ {\qquad \;\;\; = - 1} \hfill & {\varphi < 0} \hfill \\ \end{array} \)

  10. 10.

    There is a name for this singular circuit element. It is called a Nullator [47].

  11. 11.

    Assuming of course the device behaves like an ideal memristor, or one of its Ideal Generic Memristor siblings.

  12. 12.

    Given any (n + 1)-segment piecewise-linear curve, the simple universal PWL formula in the Appendix can be used to write an exact PWL equation of the curve using only the absolute value function as building blocks [5, 48].

  13. 13.

    We can easily prove that the limiting Lissajoux figure at high frequencies for an Extended Memristor is not a straight line, but a single-valued curve by recalling the proof on page 212 of [52] for Generic Memristors, where the prediction that the state x(t) must tend to the initial state x0 = x(0) remains valild also for Extended Memristors. See [53] for another example.

  14. 14.

    To illustrate that there are many different methods to synthesize and build a locally-active memristor, we opted for a circuit realization which is not derived from the Resistor-to-Memristor mutator presented in Fig. 5b.

  15. 15.

    If the pinched point is located near (but not exactly at) at the origin, we will call it an imperfect memristor.

References

  1. Chua, L.O.: Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18(5), 507–519 (1971)

    Article  Google Scholar 

  2. Chua, L.: Resistance switching memories are memristors. Appl. Phys. A: Mater. Sci. Process 102(4), 765–783 (2011)

    Article  MATH  Google Scholar 

  3. Chua, L.O.: Introduction to Nonlinear Network Theory, vol. 19, McGraw-Hill, New York (1969)

    Google Scholar 

  4. Chua, L.O.: Chua, L. O. (2012). The fourth element. Proc. IEEE 100(6), 1920–1927 (2012)

    Article  Google Scholar 

  5. Chua, L.O., Kang, S.M.: Section-wise piecewise-linear functions: Canonical representation, properties, and applications. Proc. IEEE 65(6), 915–929 (1977)

    Article  Google Scholar 

  6. Adhikari, S.P., Sah, M.P., Kim, H., Chua, L.O.: Three fingerprints of memristor. Trans. Circuits and Systems I 60(11), 3008–3021 (2013)

    Article  Google Scholar 

  7. Davy, H.: Nicholson’s J. Nat. Philos. Chem. Arts 4, 326 (1801)

    Google Scholar 

  8. Davy, H.: Elements of Chemical Philosophy: Part 1. vol. 1 JohnSon, London (1812)

    Google Scholar 

  9. Lin, D., Hui, R., Chua, L.: Gas discharge lamps are volatile memristors. IEEE Trans. Circuits and Systems I 61(7), 2066–2073 (2014)

    Article  Google Scholar 

  10. Francis, V.J.: Fundamentals of Discharge Tube Circuits. Methuen, London (1948)

    Google Scholar 

  11. Hickmott, T.W.: Low‐frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33(9), 2669–2682 (1962)

    Article  Google Scholar 

  12. Argall, F.: Switching phenomena in titanium oxide thin films. Solid State Electron. 11(5), 535–541 (1968)

    Article  Google Scholar 

  13. Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453(7191), 80 (2008)

    Article  Google Scholar 

  14. Pi, S., Lin, P., Xia, Q.: J. Vacuum Sci. Technol. B 31, 06FAQ2–1 (2013)

    Google Scholar 

  15. Kikuchi, M., Saito, M., Okushi, H.: Polarized (letter ‘8’) memory in CdSe point contact diodes. Solid State Commun. 9(10), 705–707 (1971)

    Article  Google Scholar 

  16. Henisch, H.K.: Amorphous semiconductor switching. Nature 236(5344), 205–207 (1972)

    Article  Google Scholar 

  17. Beck, A., Bednorz, J.G., Gerber, Ch., Rossel, C., Widmer, D.: Reproducible switching effect in thin oxide films for memory applications. Appl. Phys. Lett. 77(1), 139–141 (2000)

    Article  Google Scholar 

  18. Johnson, S.L., Sundararajan, A., Hunley, D.P., Strachan, D.R.: Memristive switching of single-component metallic nanowires. Nanotechnology 21(12), 125204 (2010)

    Article  Google Scholar 

  19. Waser, R.: Resistive non-volatile memory devices. Microelectron. Eng. 86(7–9), 1925–1928 (2009)

    Google Scholar 

  20. Chanthbouala, A., Garcia, V., Cherifi, R.O., Bouzehouane, K., Fusil, S., Moya, X., Xavier, S., Yamada, H., Deranlot, C., Mathur, N.D., Bibes, M., Barthélémy, A., Grollier, J.: A ferroelectric memristor. Nat. Mater. 11(10), 860 (2012)

    Article  Google Scholar 

  21. Nardi, F., Balatti, S., Larentis, S., Gilmer, D.C., Ielmini, D.: Complementary switching in oxide-based bipolar resistive-switching random memory. IEEE Trans. Electron Devices 60(1), 70–77 (2012)

    Article  Google Scholar 

  22. Sakamoto, T., Sunamura, H., Kawamura, H., Hasegawa, T., Nakayama, T., Aono, M.: Nanometer-scale switches using copper sulfide. Appl. Phys. Lett. 82(18), 3032–3034 (2003)

    Article  Google Scholar 

  23. Kim, T.H., Jang, E.Y., Lee, N.J., Choi, D.J., Lee, K.J., Jang, J., Choi, J., Moon, S.H., Jinwoo, C.: Nanoparticle assemblies as memristors. Nano Lett. 9(6), 2229–2233 (2009)

    Article  Google Scholar 

  24. Yang, Y., Sheridan, P., Lu, W.: Complementary resistive switching in tantalum oxide-based resistive memory devices. Applied Physics Letters 100(20), 203112 (2012)

    Article  Google Scholar 

  25. Szot, K., Rogala, M., Speier, W., Klusek, Z., Besmehn, A., Waser, R.: TiO2—a prototypical memristive material. Nanotechnology 22(25), 254001 (2011)

    Article  Google Scholar 

  26. Hino, T., Hasegawa, T., Terabe, K., Tsuruoka, T., Nayak, A., Ohno, T., Aono, M.: Atomic switches: atomic-movement-controlled nanodevices for new types of computing. Sci. Technol. Adv. Mater. 12(1), 013003 (2011)

    Article  Google Scholar 

  27. Jo, S.H., Kim, K., Lu, W.: Programmable resistance switching in nanoscale two-terminal devices. Nano Lett. 9(1), 496–500 (2009)

    Article  Google Scholar 

  28. Pickett, M.D., Medeiros-Ribeiro, G., Williams, R.S.: A scalable neuristor built with Mott memristors. Nat. Mater. 12(2), 114 (2013)

    Article  Google Scholar 

  29. Pickett, M.D., Strukov, D.B., Borghetti, J.L., Yang, J.J., Sinder, G.S., Stewart, D.R., Williams, R.S.:  Switching dynamics in titanium dioxide memristive devices. J. Appl. Phys. 106(7) 074508 (2009)

    Article  Google Scholar 

  30. MacVittie, K., Katz, E.: Electrochemical system with memimpedance properties. J. Phy. Chem. 117(47), 24943–24947 (2013)

    Article  Google Scholar 

  31. Sah, M.P., Yang, C., Kim, H., Muthuswamy, B., Jevtic, J., Chua, L.: A generic model of memristors with parasitic components. Trans. Circuits and Syst. I 62(3), 891–898 (2014)

    Article  MathSciNet  Google Scholar 

  32. Martinsen, O.G., Grimnes, S., Lutken, C.A., Johnsen, G.K.: Memristance in human skin. J. Phys Conf. Ser. 224(1), 012071 (2010)

    Google Scholar 

  33. Johnsen, G.K., Lutken, C.A., Martinsen, O.G., Grimnes, S.: Memristive model of electro-osmosis in skin. Phys. Rev. E 83(3), 031916 (2011)

    Google Scholar 

  34. Gale, E., Mayne, R., Adamatzky, A., Costello, B.: Drop-coated titanium dioxide memristors. Mater. Chem. Phys. 143, 524 (2014)

    Article  Google Scholar 

  35. Volkov, A.G., Tucket, C., Reedus, J., Volkova, M.I., Markin, V.S., Chua, L.: J. Memristors in plants. Plant Signal. Behav. 9(3), e28152–1 (2014)

    Article  Google Scholar 

  36. Liu, K., Cheng, C., Suh, J., Tang-Kong, R., Fu, D., Lee, S., Zhou, J., Chua, L.O., Wu, J.: Powerful, multifunctional torsional micromuscles activated by phase transition. Adv. Mater. 26(11), 1746–1750 (2014)

    Article  Google Scholar 

  37. Georgiou, P.S., Barahona, .M, Yaliraki, S.N., Drakakis, E.M.: Phy. Rev. Appl. (Under Review) (2014)

    Google Scholar 

  38. Hodgkin, A.L., Huxley, A.F.: This Week's Citation Classic. J. Physiol. 117, 500–544 (1952)

    Google Scholar 

  39. Cole, K.S.: Membranes, Ions and Impulses: a chapter of classical biophysics. vol. 1, University of California Press, Berkeley (1972)

    Google Scholar 

  40. Chua, L.: Memristor, Hodgkin–Huxley, and edge of chaos. Nanotechnology 24(38), 383001 (2013)

    Article  Google Scholar 

  41. Sah, M.P., Kim, H., Chua, L.: Brains are made of memristors. IEEE Circuits Syst. Mag. 14(1), 12–36 (2014)

    Article  Google Scholar 

  42. Chua, L., Sbitnev, V., Kim, H.: Int. J. Bifurc. Hodgkin–Huxley axon is made of memristors. Chaos 22(03), 1230011 (2012)

    Article  MATH  Google Scholar 

  43. Chua, L.O.: Device modeling via nonlinear circuit elements. IEEE Trans. Circuits Syst. 27(11), 1014–1044 (1980)

    Article  MathSciNet  MATH  Google Scholar 

  44. Chua, L.O.: Nonlinear circuit foundations for nanodevices. IEEE Proceedings 91(11), 1830–1859 (2003)

    Google Scholar 

  45. Kew, J.N., Davies, C.H.: Ion channels: from structure to function. Oxford University Press, Oxford (2010)

    Google Scholar 

  46. Ashcroft, F.M.: Ion Channels and Disease. Academic Press, London (1999)

    Google Scholar 

  47. Carlin, H.J., Youla, D.C.: Network synthesis with negative resistors. Proc. IRE 49(5), 907–920 (1961)

    Article  MathSciNet  Google Scholar 

  48. Chua, L.O., Desoer, C.A., Kuh, E.S.: Linear and Nonlinear Circuits. MCGraw-Hill, New Yorks (1987)

    Google Scholar 

  49. Linn, E., Rosezin, R., Kügeler, C., Waser, R.: Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9(5), 403 (2010)

    Article  Google Scholar 

  50. Waser, R., Aono, M.: Nat. Mater. 6, 833 (2007)

    Google Scholar 

  51. Strogatz, S.H.: Nonlinear Dynamics And Chaos. Westview Press, Boulder (2001)

    Google Scholar 

  52. Chua, L.O., Kang, S.M.: Memristive devices and systems. Proc. IEEE 64(2), 209–223 (1976)

    Article  MathSciNet  Google Scholar 

  53. Corinto, F., Ascoli, A.: Memristive diode bridge with LCR filter. Electron. Lett. 48(14), 824–825 (2012)

    Article  Google Scholar 

  54. Reenstra, A.L.: A low-frequency oscillator using PTC and NTC thermistors. IEEE Trans. Electron Devices, ED-16 544–554 (1969)

    Article  Google Scholar 

  55. Muthuswamy, B., Chua, L.O.: Simplest chaotic circuit. Int. J. Bifurcat. Chaos 20(05), 1567–1580 (2010)

    Article  Google Scholar 

  56. Parker, T.S., Chua, L.O.: Practical Numerical Algorithms for Chaotic Systems, Springer, New York (1989)

    Book  MATH  Google Scholar 

  57. Marsden, J.E.: The Hopf Bifurcation and Its Applications. Springer, New York (1976)

    Chapter  MATH  Google Scholar 

  58. Kim, H., Adhikari, S.P.: Memistor is not memristor [express letters]. IEEE Circuits Syst. Mag. 12(1), 75–78 (2012)

    Article  Google Scholar 

  59. Adhikari, S.P., Kim, H.: Memristor bridge synapse-based neural network and its learning. IEEE Trans. Circuits and Systems I 23(9), 1426–1435 (2012)

    Article  Google Scholar 

  60. Chua, L.: Introduction to memristors. IEEE Expert Now Short Course, CD ROM (http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=EDP091&queryText%3DIntroduction+to+Memristors) (2009)

  61. Pershin, Y.V., Ventra, M.D.: Memory effects in complex materials and nanoscale systems. Adv. Phys. 60(2), 145–227 (2011)

    Article  Google Scholar 

Download references

Acknowledgements

The author would like to thank Prof. Hyongsuk Kim, and his colleagues Dr. Maheshwar Pd. Sah, and Ram Kaji Budhathoki for their indispensable assistance in the preparation of this paper.

He also wishes to acknowledge financial support from the USA Air force office of Scientific Research under Grant number FA9550-13-1-0136 and from the European Commission Marie Curie Fellowship

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Leon Chua .

Editor information

Editors and Affiliations

Appendix

Appendix

Universal formula for continuous piecewise-linear functions

figure y

Rights and permissions

Reprints and permissions

Copyright information

© 2019 Springer Nature Switzerland AG

About this chapter

Check for updates. Verify currency and authenticity via CrossMark

Cite this chapter

Chua, L. (2019). If It’s Pinched It’s a Memristor. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_2

Download citation

  • DOI: https://doi.org/10.1007/978-3-319-76375-0_2

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-76374-3

  • Online ISBN: 978-3-319-76375-0

  • eBook Packages: Computer ScienceComputer Science (R0)

Publish with us

Policies and ethics