Abstract
Memristor is a new circuit element defined by a state-dependent Ohm’s law between the memristor voltage and current. It has recently been successfully built, however, its electrical characteristics are not fully known yet. Like other circuit elements R, L and C, there could have various configurations of multiple memristors including serial and parallel connections in a variety of applications. When input voltage/current is supplied to a circuit with multiple memristors, behavior of the device becomes complicated and is difficult to predict. In this chapter, composite characteristics of the serial and parallel connections of memristors are investigated using both linear and nonlinear models. Also, the behavior of individual memristor is formulated mathematically and a general computation method of composite memristance for multiple memristor circuits of diverse configurations is proposed.
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Budhathoki, R.K., Pd. Sah, M., Prasad Adhikari, S., Kim, H., Chua, L. (2019). Behavior of Multiple Memristor Circuits. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_31
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DOI: https://doi.org/10.1007/978-3-319-76375-0_31
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