Abstract
A JET-X (Joint European X-ray Telescope) CCD fabricated on a high-purity (1.5 kΩcm), 65 μm thick epi-layer, on a 550 μm thick p + substrate has been developed for X-ray astronomy. A three-dimensional (3-D) numerical analysis for evaluating a charge handling capability and charge transfer efficiency of a JET-X CCD using a static and transient simulation has been performed. A supplementary channel technique is analysed by the 3-D simulation. A static maximum charge capacity was found to be 60040 electrons under a full-well condition. The effect of an output gate voltage on charge transfer between the last well and an output diffusion node was observed and an optimum output gate voltage for efficient charge transfer was found to be 3 or 4 V. The 3-D simulated result showed a higher charge capability by appr. 18% than result from a 1-D model.
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Kim, Mh., An, Ck., Park, Bs. (2007). Determination of Charge Handling Capability of a Deep Depletion Charge Coupled Device for Astronomic Applications. In: Huang, DS., Heutte, L., Loog, M. (eds) Advanced Intelligent Computing Theories and Applications. With Aspects of Contemporary Intelligent Computing Techniques. ICIC 2007. Communications in Computer and Information Science, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74282-1_129
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DOI: https://doi.org/10.1007/978-3-540-74282-1_129
Publisher Name: Springer, Berlin, Heidelberg
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