Abstract
IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems with the devices, model and model parameters are necessary in circuit simulations. This paper presents a procedure for identifying the most important model parameters of IGBT. As an example, the results of identification for BUP302 are given.
The work was supported by Shanghai Leading Academic Discipline Project(Project Number : T0103)
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Sheng, K., Williams, B.W., Finney, S.J.: A Review of IGBT Models[J]. IEEE Trans. on Power Electronics 15(6), 1250–1266 (2000)
Oh, H.S., El-Nokali, M.A.: A new IGBT Behavioral Model[J]. Solid-State Electron. 45(11), 2069–2075 (2001)
Hefner Jr., A.R.: Modeling Buffer Layer IGBTs for Circuit Simulation[J]. IEEE Trans. Power Electron. 10(3), 111–123 (1995)
Hefner, A.R., Blackburn, D.L.: An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated-Gate Bipolar Transistor[J]. Solid-State Electron. 31(10), 1513–1532 (1988)
Hefner, A.R.: Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)[J]. IEEE Trans. on Industrial Application 35(6), 606–614 (1988)
Kang, W.Y., Ahn, H.: A Parameter Extraction Algorithm for IGBT Behavioral Model[J]. IEEE Trans. on Power Electronics 19(6), 1365–1371 (2004)
Musumeci, S., Raciti, A., Sardo, M., et al.: PT-IGBT PSpice Model with New Parameter Extraction for Life-time and Epy Dependent Behavior Simulation[C]. IEEE PESC Annual Mtg. Rec., 1682–1688 (1996)
Purkes, S.J., Kraus, R.: Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model. IEEE IAS Rec., 1166–1173 (October 1997)
Hefner, A.R., Bouche, S.: Automated Parameter Extraction Software for Advanced IGBT Modeling. In: Computer in power electronics 2000. COMPEL 2000, The 7th workshop, 16-18 July, 2000, pp. 10–18 (2000)
Bryant, A.T., Kang, X.S., Santi, E., Palmer, P.R., Hudgins, J.L.: Two-Step Parameter Extraction Procedure With Formal Optimization for Physics-Based Circuit Simulator IGBT and p-i-n Diode Models. IEEE Transactions on Power Electronics 21(2), 295–308 (2006)
Penny, J.E.T., Lindfield, G.R.: Numerical Methods Using MATLAB, 2nd edn. Prentice-Hall, Englewood Cliffs (2000)
Allard, B., Garrab, H., Ammous, W.K., Morel, H.: Switching parameter maps-A new approach to the validity domain of power device models. In: The proceedings of EPE Conference, Toulouse, France, September 2003, pp. 1220–1225 (2003)
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 2007 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Gao, Y., Li, N., Guo, S., Liu, H. (2007). The Modeling and Parameters Identification for IGBT Based on Optimization and Simulation. In: Li, K., Fei, M., Irwin, G.W., Ma, S. (eds) Bio-Inspired Computational Intelligence and Applications. LSMS 2007. Lecture Notes in Computer Science, vol 4688. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74769-7_67
Download citation
DOI: https://doi.org/10.1007/978-3-540-74769-7_67
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-74768-0
Online ISBN: 978-3-540-74769-7
eBook Packages: Computer ScienceComputer Science (R0)