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Vacuum Fluorescent Displays (VFDs)

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Abstract

This section considers Vacuum Fluorescent Display (VFD) technology which produces a high brightness illumination using the principal of a triode vacuum tube in conjunction with a phosphor-coated anode.

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Abbreviations

CIG:

Chip in Glass

eb:

Anode Voltage

ec:

Grid Voltage

ebc:

Common Grid/Anode Voltage

Ebco:

Anode Cutoff Voltage

Ecco:

Grid Cutoff Voltage

Ef:

Cathode Filament Heating Voltage

Ek:

Filament Bias Voltage

ITO:

Indium Tin Oxide

POC:

Phosphor on Chip – Active Matrix

VFD:

Vacuum Fluorescent Display

References

  1. Iwase H et al (1995) VFD for head up display with luminance of 35000 cd/m². Society of Automotive Engineers, Warren Dale, PA, USA

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  2. Kubota S, Yamane H et al (2005) Substituting sulphide phosphors in VFD. JP Patent 2,005,008,674

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  3. Maeda T et al (2007) Increasing phosphor area in VFD. US Patent 7,262,549

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  4. Mizohata T, Hiraga M (2006) Multiplex anode matrix VFD. US Patent 7,071,903

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  5. Hamada T, Kitagawa K, Toki H (2004) Cadmium free phosphor for VFD. US Patent 6,690,119

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  6. Oshima H (2003) Zn2GeO4 cadmium free phosphor for VFD. JP Patent 2,003,336,060

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  7. Uemura S, Yotani J et al (2003) VFD with field emission source. US Patent 6,624,566

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Further Reading

  • Application notes. www.noritake-itron.com

  • Blankenbach K, Gassler G, Koops HWP (2008) Vacuum displays. In: Eichmeier JA, Thumm MK (eds) Vacuum electronics: components and devices. Springer, Berlin

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  • Kamikubo H, (1992) ZnO: Zn phosphor with tungsten oxide powder. US Patent 5,128,063

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  • Ogawa Y, Ishikawa K et al (2003) Double faced VFD driving method. US Patent 6,611,094

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Acknowledgments

The author wishes to thank Tadami Maeda of Noritake Itron for helpful discussion.

Images supplied courtesy of K. Kinoshita, Director, Noritake Itron Corporation.

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Correspondence to Andrew Stubbings .

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© 2012 Springer-Verlag Berlin Heidelberg

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Stubbings, A. (2012). Vacuum Fluorescent Displays (VFDs). In: Chen, J., Cranton, W., Fihn, M. (eds) Handbook of Visual Display Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-79567-4_71

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