Abstract
This paper presents a study on accuracy analysis of power models used for high-level power analysis in a chip design. The purpose is to find factors that are not modeled properly or not yet put into consideration. Different methods of characterizing input capacitance, effects of previous input states and input curves are discussed based on the comparisons with SPICE simulation results using 90nm bulk CMOS and 32nm Metal Gate/High-K Predictive Technology Model (PTM) models.
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Bai, X., Xu, H., Huang, M. (2011). Accuracy Analysis of Power Characterization and Modeling. In: Lee, G., Howard, D., Ślęzak, D. (eds) Convergence and Hybrid Information Technology. ICHIT 2011. Lecture Notes in Computer Science, vol 6935. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-24082-9_49
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DOI: https://doi.org/10.1007/978-3-642-24082-9_49
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-24081-2
Online ISBN: 978-3-642-24082-9
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