Abstract
By microscopically observing widely used data files, we identified the considerable room for life time improvement in NAND flash memory, which is due to the discovery of a non-uniformity in bit-level data patterns. In an attempt to exploit the discovery, we propose a novel bit-level wear-leveling scheme. Instead of considering only the view of page-level or block-level, we incorporate the non-uniformity in data encoding patterns into wear-leveling scheme. Because of its orthogonality to the existing block-level wear-leveling approaches, our solution can be adopted over the existing solutions without considerable overhead and extend NAND flash’s life span up to 36% in case of SLC.
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© 2014 Springer-Verlag Berlin Heidelberg
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Song, Y., Hwang, W., Park, KW., Park, K.H. (2014). Microscopic Bit-Level Wear-Leveling for NAND Flash Memory. In: Park, J., Adeli, H., Park, N., Woungang, I. (eds) Mobile, Ubiquitous, and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 274. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-40675-1_48
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DOI: https://doi.org/10.1007/978-3-642-40675-1_48
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-40674-4
Online ISBN: 978-3-642-40675-1
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