Abstract
The characteristic of specifically tunable negative differential resistance (NDR) of single-electron transistor (SET) controlled by capacitance which is noted accidentally in our experiment is studied in this paper. Tunable NDR of SET controlled by single source, drain and gate capacitances are simulated, respectively, then it is also done by controlling more than one capacitance. From the simulation results, it is seen that NDR of SET can be modulated by changing the value of capacitance of SET. Moreover, the cause of the phenomenon of tunable NDR of SET controlled by capacitance is given a qualitative analysis based on macro model.
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References
Likharev, K.K.: Single-Electron Devices and Their Applications. Proceedings of the IEEE 87(4), 606–632 (1999)
Heij, C.P., Dixon, D.C., Hadley, P., Mooij, J.E.: Negative differential re-sistance due to single-electron switching. Appl. Phys. Lett. 74, 1042–1044 (1999)
Lee, B.H., Jeong, Y.F.: A novel SET/MOSFET hybrid static memory cell design. IEEE Trans. Nanotechnol. 3, 377–382 (2003)
George, H.C., Pierre, M., Jeh, X., Orlov, A.O., Sanquer, M., Snider, G.L.: Application of negative differential conductance in Al/AlOX single-electron transistors for background charge characterization. Appl. Phys. Lett. 96(4), 042114 (2010)
Kaasbjerg, K., Flensberg, K.: Image charge effects in single-molecule junctions: Breaking of symmetries and negative-differential resistance in a benzene single-electron transistor. Phys. Rev. B 84(11), 115457 (2011)
Miyaji, K., Saitoh, M.: Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors With Discrete Quantum Energy Levels. IEEE Trans. Nanotechnol. 5(1), 167–173 (2006)
Lee, S., Miyaji, K., Kobayashi, M., Hiramoto, T.: Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor. Appl. Phys. Lett. 92(7), 073502 (2008)
See, J., Dollfus, P., Galdin, S.: Theoretical Investigation of Negative Differential Conductance Regime of Silicon Nanocrystal Single-Electron Devices. IEEE Trans. on Electron Devices 53(5), 1268–1273 (2006)
Sui, B., Fang, L., Chi, Y., Zhang, C.: Analysis of negative differential conductance of single-island single-electron transistors owing to Coulomb oscillations. IET Circuits Devices Syst. 4(5), 425–432 (2010)
Chen, S.L., Griffin, P.B., Plummer, J.D.: Negative Differential Resistance Circuit Design and Memory Applications. IEEE Trans. on Electron Devices 56(4), 634–640 (2009)
Ramesh, A., Park, S.Y., Berger, P.R.: 90 nm 32×32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation. IEEE Trans. on Electron Devices 58(10), 2432–2445 (2011)
Wasshuber, C.: Computational Single-electronics. Springer, New York (2001)
Mahapatra, S., Ionescu, A.M.: Realization of Multiple Valued Logic and Memory by Hybrid SETMOS Architecture. IEEE Trans. Nanotechnol. 4(6), 705–714 (2005)
Gan, K.J., Tsai, C.S., Chen, Y.W., Yeh, W.K.: Voltage-controlled multiple-valued logic design using negative differential resistance devices. Solid State Electron. 54(6), 1637–1640 (2010)
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Chen, X., Xing, Z., Sui, B. (2013). Tunable Negative Differential Resistance of Single-Electron Transistor Controlled by Capacitance. In: Xu, W., Xiao, L., Zhang, C., Li, J., Yu, L. (eds) Computer Engineering and Technology. NCCET 2013. Communications in Computer and Information Science, vol 396. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-41635-4_24
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DOI: https://doi.org/10.1007/978-3-642-41635-4_24
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