Abstract
Quantum mechanical analytical modeling and simulations for calculating the drain current of FinFET devices has been proposed in this paper. The work is presented for a FinFET structure with channel length of 30 nm, Fin height of 30 nm and Fin thickness of 20 nm. The variation of drain current with applied drain voltage and gate voltage for varying channel lengths and Fin thicknesses has also been evaluated with modeling and simulation using quasi Fermi potential approach. Our analytical modeling results were compared and contrasted with the reported experimental results in order to verify our proposed model. A close match was found which validates our analytical approach. The drain current simulations have also been evaluated using the Synopsys TCAD tool Sentaurus and compared with the results obtained through our QM model.
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Raj, B., Saxena, A.K., Dasgupta, S. (2012). Quantum Mechanical Analytical Drain Current Modeling and Simulation for Double Gate FinFET Device Using Quasi Fermi Potential Approach. In: Deep, K., Nagar, A., Pant, M., Bansal, J. (eds) Proceedings of the International Conference on Soft Computing for Problem Solving (SocProS 2011) December 20-22, 2011. Advances in Intelligent and Soft Computing, vol 131. Springer, New Delhi. https://doi.org/10.1007/978-81-322-0491-6_35
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DOI: https://doi.org/10.1007/978-81-322-0491-6_35
Publisher Name: Springer, New Delhi
Print ISBN: 978-81-322-0490-9
Online ISBN: 978-81-322-0491-6
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