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International Conference on Intelligent Computing for Sustainable Energy and Environment

International Conference on Life System Modeling and Simulation

ICSEE 2017, LSMS 2017: Intelligent Computing, Networked Control, and Their Engineering Applications pp 705–713Cite as

Pinched Hysteresis Loop Characteristics of a Fractional-Order HP \(\mathrm{TiO_2}\) memristor

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Part of the book series: Communications in Computer and Information Science ((CCIS,volume 762))

Abstract

A memristor is a nonlinear resistor with time memory. Usually, the memory without any loss is an ideal case. Recent studies show that there is a memory loss of the classic HP \(\mathrm{TiO_2}\) linear model, which has memory effect between no memory and ideal memory (complete memory). To describe the memory property, we propose a fractional-order HP \(\mathrm{TiO_2}\) memristor model with the order \(\alpha \) between 0 and 1, and the pinched hysteresis loop characteristics are studied as the fractional-order model under periodic external excitation. Compared with the classic integer-order memristor model, numerical simulations show that the fractional-order derivative \(\alpha \) is also an important parameter effects the pinched hysteresis loop area, the memristor value and the output voltage amplitude evidently and regularly.

This work was sponsored by NSF of China under Grant 11402125, 61673223, NSF of Jiangsu Province of China under Grant BK20140861, NSF of Jiangsu Higher Education Institutions of China under Grant 14KJB130003, and the Nanjing University of Posts and Telecommunications Talent Introduction Foundation under Grant NY213107.

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Authors and Affiliations

  1. Institute of Advanced Technology, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People’s Republic of China

    Min Shi & Songlin Hu

  2. Hubei Province Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang, 443002, People’s Republic of China

    Min Shi & Songlin Hu

Authors
  1. Min Shi
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  2. Songlin Hu
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Corresponding author

Correspondence to Min Shi .

Editor information

Editors and Affiliations

  1. Nanjing University of Posts and Telecommunications, Nanjing, China

    Dong Yue

  2. Shanghai University , Shanghai, China

    Chen Peng

  3. Shanghai University , Shanghai, China

    Dajun Du

  4. Nanjing University of Posts and Telecommunications, Nanjing, China

    Tengfei Zhang

  5. Shanghai University , Shanghai, China

    Min Zheng

  6. Swinburne University of Technology, Melbourne, Victoria, Australia

    Qinglong Han

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Shi, M., Hu, S. (2017). Pinched Hysteresis Loop Characteristics of a Fractional-Order HP \(\mathrm{TiO_2}\) memristor. In: Yue, D., Peng, C., Du, D., Zhang, T., Zheng, M., Han, Q. (eds) Intelligent Computing, Networked Control, and Their Engineering Applications. ICSEE LSMS 2017 2017. Communications in Computer and Information Science, vol 762. Springer, Singapore. https://doi.org/10.1007/978-981-10-6373-2_70

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  • DOI: https://doi.org/10.1007/978-981-10-6373-2_70

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-6372-5

  • Online ISBN: 978-981-10-6373-2

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