Skip to main content

A Novel Neuro-Space Mapping Technique Incorporating Self-heating Effect for High-Power Transistor Modeling

  • Conference paper
  • First Online:
Communications, Signal Processing, and Systems (CSPS 2017)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 463))

  • 83 Accesses

Abstract

Accurate modeling of self-heating effect of high-power transistor is critical for reliable design of microwave circuit and system. In this paper, a novel neuro-space mapping (Neuro-SM) method incorporating self-heating effect is presented. By modifying the voltage and temperature relationships in the existing electro-thermal nonlinear model, the proposed Neuro-SM produces a new model exceeding the accuracy limit of the model. To accurately describe the self-heating effect, separate mappings for temperature and voltage at gate and drain are used as the mapping structure in the proposed method. The mappings combined with thermal sub-circuit including thermal resistance-capacitance parallel with thermal current are used to describe the self-heating effect. The validity and efficiency of the proposed Neuro-SM method incorporating self-heating effect are demonstrated through a modeling example of a high-power transistor used in cellular infrastructure market.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 259.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 329.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Mishra, U., Shen, L., Kazior, T., et al.: GaN-based RF power devices and amplifiers. Proc. IEEE 96(2), 287–305 (2008)

    Google Scholar 

  2. Shiojima, K., Makimura, T., Kosugi, T., et al.: High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. Electron. Lett. 40(12), 775–776 (2004)

    Google Scholar 

  3. Wang, C., Xu, Y., Yu, X., et al.: An electrothermal model for empirical large-signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects. IEEE Trans. Microw. Theory Tech. 62(12), 2878–2887 (2014)

    Google Scholar 

  4. Liu, L., Ma, J., Ng, G.: Electrothermal large-signal model of III-V FETs including frequency dispersion and charge conservation. IEEE Trans. Microw. Theory Tech. 57(12), 3106–3117 (2009)

    Google Scholar 

  5. Jarndal, A., Ghannouchi, F.: Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects. Solid-State Electron. 123, 19–25 (2016)

    Google Scholar 

  6. Zhang, L., Xu, J., Yagoub, M., et al.: Neuro-space mapping technique for nonlinear device modeling and large-signal simulation. In: IEEE MIT-S International Microwave Symposium, Philadelphia, PA, pp. 173–176, June 2003

    Google Scholar 

  7. Zhang, Q., Gupta, K., Devabhaktuni, V.: Artificial neural networks for RF and microwave design: from theory to practice. IEEE Trans. Microw. Theory Tech. 51(4), 1339–1350 (2003)

    Google Scholar 

  8. Bandler, J., Cheng, Q., Dakroury, S., et al.: Space mapping: the state of the art. IEEE Trans. Microw. Theory Tech. 52(1), 337–361 (2004)

    Google Scholar 

  9. Zhang, L., Xu, J., Yagoub, M., et al.: Efficient analytical formulation and sensitivity analysis of neuro-space mapping for nonlinear microwave device modeling. IEEE Trans. Microw. Theory Tech. 53(9), 2752–2767 (2005)

    Google Scholar 

  10. Zhu, L., Liu, K., Zhang, Q., et al.: An enhanced analytical neuro-space mapping method for large-signal microwave device modeling. In: IEEE MIT-S International Microwave Symposium Digest, Montreal, QC, pp. 1–3, June 2012

    Google Scholar 

  11. Zhu, L., Zhang, Q., Liu, K., et al.: A novel dynamic neuro-space mapping approach for nonlinear microwave device modeling. IEEE Microw. Wireless Compon. Lett. 26(2), 131–133 (2016)

    Google Scholar 

  12. Xu, J., Yagoub, M., Ding, R., et al.: Exact adjoint sensitivity for n based microwave modeling and design. IEEE Trans. Microw. Theory Tech. 51(1), 226–237 (2003)

    Google Scholar 

  13. Angelov, I., Zirath, H., Rorsman, N.: A new empirical nonlinear model for HEMT and MESFET devices. IEEE Trans. Microw. Theory Tech. 40(12), 2258–2266 (1992)

    Google Scholar 

Download references

Acknowledgments

This work is supported by the Key project of Tianjin Natural Science Foundation (No. 16JCZDJC38600).

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Lin Zhu .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2019 Springer Nature Singapore Pte Ltd.

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Zhu, L., Zhao, J., Liu, W., Pan, L., Liu, D. (2019). A Novel Neuro-Space Mapping Technique Incorporating Self-heating Effect for High-Power Transistor Modeling. In: Liang, Q., Mu, J., Jia, M., Wang, W., Feng, X., Zhang, B. (eds) Communications, Signal Processing, and Systems. CSPS 2017. Lecture Notes in Electrical Engineering, vol 463. Springer, Singapore. https://doi.org/10.1007/978-981-10-6571-2_212

Download citation

  • DOI: https://doi.org/10.1007/978-981-10-6571-2_212

  • Published:

  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-6570-5

  • Online ISBN: 978-981-10-6571-2

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics