Abstract
Accurate modeling of self-heating effect of high-power transistor is critical for reliable design of microwave circuit and system. In this paper, a novel neuro-space mapping (Neuro-SM) method incorporating self-heating effect is presented. By modifying the voltage and temperature relationships in the existing electro-thermal nonlinear model, the proposed Neuro-SM produces a new model exceeding the accuracy limit of the model. To accurately describe the self-heating effect, separate mappings for temperature and voltage at gate and drain are used as the mapping structure in the proposed method. The mappings combined with thermal sub-circuit including thermal resistance-capacitance parallel with thermal current are used to describe the self-heating effect. The validity and efficiency of the proposed Neuro-SM method incorporating self-heating effect are demonstrated through a modeling example of a high-power transistor used in cellular infrastructure market.
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Acknowledgments
This work is supported by the Key project of Tianjin Natural Science Foundation (No. 16JCZDJC38600).
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Zhu, L., Zhao, J., Liu, W., Pan, L., Liu, D. (2019). A Novel Neuro-Space Mapping Technique Incorporating Self-heating Effect for High-Power Transistor Modeling. In: Liang, Q., Mu, J., Jia, M., Wang, W., Feng, X., Zhang, B. (eds) Communications, Signal Processing, and Systems. CSPS 2017. Lecture Notes in Electrical Engineering, vol 463. Springer, Singapore. https://doi.org/10.1007/978-981-10-6571-2_212
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DOI: https://doi.org/10.1007/978-981-10-6571-2_212
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