Abstract
TCAD simulation of electronic device has always been the basic approach to understand solid state electronics and to frame road-map for the evolution of future technology. Design of devices on these materials require better understanding of the physical insights to the internals of the device structure. In such a scenario, TCAD tool can help to visualize internal dynamics of carriers and fields in the device structure, thus helping to improve them further. Device structures are evolving continuously leading to an increase in complexity of computation of simulation. There is an increasing challenge to these simulators to improvise compact device models, whereby generating precise results. The responsibility of TCAD designers is ever increasing to develop improved solvers featuring better predictive capabilities. In this work, an effort has been made to compare the performance of an FEM based proposed simulator with conventional available device simulator. A simple pn junction diode is designed in both the simulators and a comparison of different electrical properties has been done by incorporating similar models and exactly same material parameters.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Pourfath, M., Sverdlov, V., Selberherr, S.: Transport modeling for nanoscale semiconductor devices. In: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1737–1740 (2010)
Whitaker, B., Barkley, A., Cole, Z., Passmore, B., Martin, D., McNutt, T.R., Lostetter, A.B., Lee, J.S., Shiozaki, K.: A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices. IEEE Trans. Power Electron. 29(5), 2606 (2014)
Mao, S., Wu, T., Lu, X., Popovic, J., Ferreira, J.A.: Three-phase active front-end rectifier efficiency improvement with silicon carbide power semiconductor devices. In: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1–8. IEEE (2016)
Wang, Z., Shi, X., Tolbert, L.M., Wang, F.F., Liang, Z., Costinett, D., Blalock, B.J.: A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator-based gate drive. IEEE Trans. Power Electron. 30(3), 1432 (2015)
Peng, K., Eskandari, S., Santi, E.: Characterization and modeling of a gallium nitride power HEMT. IEEE Trans. Ind. Appl. 52(6), 4965 (2016)
Baliga, B.J.: Gallium nitride devices for power electronic applications. Semicond. Sci. Technol. 28(7), 074011 (2013)
Kumar, G., Singh, M., Bulusu, A., Trivedi, G.: A parallel device simulator based on finite element method. In: 2015 International Conference on Computational Science and Computational Intelligence (CSCI), pp. 30–35 (2015)
Kumar, G., Singh, M., Ray, A., Trivedi, G.: An FEM based framework to simulate semiconductor devices using streamline upwind Petrov-Galerkin stabilization technique. In: 2017 27th International Conference Radioelektronika (RADIOELEKTRONIKA), pp. 1–5 (2017)
Kimoto, T., Cooper, J.A.: Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications. Wiley, Hoboken (2014)
Rao, S., Pangallo, G., Corte, F.G.D.: Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes. IEEE Electron Device Lett. 36(11), 1205 (2015)
Daulton, T., Bernatowicz, T., Lewis, R., Messenger, S., Stadermann, F., Amari, S.: Polytype distribution of circumstellar silicon carbide: microstructural characterization by transmission electron microscopy. Geochim. Cosmochim. Acta 67(24), 4743 (2003)
Codreanu, C., Avram, M., Carbunescu, E., Iliescu, E.: Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs performances. Mater. Sci. Semiconductor Process. 3(12), 137 (2000)
Sentaurus Device User Guide, Version L-2016.03, March 2016
Shur, M., Rumyantsev, S.L., Levinshten, M.E.: SiC Materials and Devices, vol. 1. World Scientific, Singapore (2006)
Sundaresan, S.G., Rao, M.V., Tian, Y., Schreifels, J.A., Wood, M.C., Jones, K.A., Davydov, A.V.: Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC. J. Electron. Mater. 36(4), 324 (2007)
Chen, W.-K.: The VLSI Handbook. CRC Press, Boca Raton (2016)
Neudeck, P.G., Powell, J.A.: Performance limiting micropipe defects in silicon carbide wafers. IEEE Electron Device Lett. 15(2), 63 (1994)
Shur, M.: SiC Materials and Devices. Selected Topics in Electronics and Systems. World Scientific, Singapore (2007)
Oden, J.T.: An Introduction to the finite element method with applications to nonlinear problems. SIAM Rev. 31(3), 512 (1989)
Mohamed, N., Sujod, M.: Finite elements in semiconductor devices. In: International Conference on Information Management and Engineering, pp. 108–110 (2009)
Elasser, A., Kheraluwala, M.H., Ghezzo, M., Steigerwald, R.L., Evers, N.A., Kretchmer, J., Chow, T.P.: A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications. IEEE Trans. Ind. Appl. 39(4), 915 (2003)
Author information
Authors and Affiliations
Corresponding authors
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Ray, A., Kumar, G., Bordoloi, S., Sinha, D.K., Agarwal, P., Trivedi, G. (2017). FEM Based Device Simulator for High Voltage Devices. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_14
Download citation
DOI: https://doi.org/10.1007/978-981-10-7470-7_14
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-7469-1
Online ISBN: 978-981-10-7470-7
eBook Packages: Computer ScienceComputer Science (R0)