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International Symposium on VLSI Design and Test

VDAT 2019: VLSI Design and Test pp 180–189Cite as

On-Chip Threshold Compensated Voltage Doubler for RF Energy Harvesting

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Part of the book series: Communications in Computer and Information Science ((CCIS,volume 1066))

Abstract

This paper presents a new threshold voltage compensation scheme for voltage doubler in-order to convert radio frequency (RF) energy to direct current (DC) energy for RF energy harvesting applications. The proposed scheme utilizes a chain of diode connected MOS transistors instead of secondary battery or large off-chip resistors, for minimizing losses due to the MOSFET threshold voltage. The proposed doubler is suitable for RFID applications where targeted supply voltage is 0.5 V. The voltage doubler has been designed and simulated in UMC’s 0.18 \(\upmu \)m CMOS technology node. It achieves a peak power conversion efficiency (PCE) of 48% at an input power of −12 dBm for an output DC voltage of 0.5 V, and hence suitable for ultra-low power applications.

Supported by BITS Pilani, Hyderabad.

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Authors and Affiliations

  1. Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad, India

    Arun Mohan, Saroj Mondal & Surya Shankar Dan

Authors
  1. Arun Mohan
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  2. Saroj Mondal
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  3. Surya Shankar Dan
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Corresponding author

Correspondence to Arun Mohan .

Editor information

Editors and Affiliations

  1. Computer Science and Engineering, Indian Institute of Technology Indore, Indore, India

    Anirban Sengupta

  2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India

    Sudeb Dasgupta

  3. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India

    Virendra Singh

  4. Department of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, India

    Rohit Sharma

  5. Electrical Engineering, Indian Institute of Technology Indore, Indore, India

    Santosh Kumar Vishvakarma

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© 2019 Springer Nature Singapore Pte Ltd.

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Mohan, A., Mondal, S., Dan, S.S. (2019). On-Chip Threshold Compensated Voltage Doubler for RF Energy Harvesting. In: Sengupta, A., Dasgupta, S., Singh, V., Sharma, R., Kumar Vishvakarma, S. (eds) VLSI Design and Test. VDAT 2019. Communications in Computer and Information Science, vol 1066. Springer, Singapore. https://doi.org/10.1007/978-981-32-9767-8_16

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  • DOI: https://doi.org/10.1007/978-981-32-9767-8_16

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-32-9766-1

  • Online ISBN: 978-981-32-9767-8

  • eBook Packages: Computer ScienceComputer Science (R0)

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