Abstract
This paper describes analogue VLSI synaptic circuitry incorporating two forms of plasticity: a nonassociative mechanism analogous to paired-pulse facilitation (PPF), and an associative form of adaptation analogous to the short-term potentiation (STP) variety of plasticity. Simulation results demonstrate expected temporal characteristics of the plasticity mechanisms. The time-course of decay of associative potentiation is established by utilising diode leakage current.
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Schultz, S.R., Jabri, M.A. A silicon basis for synaptic plasticity. Neural Process Lett 2, 23–27 (1995). https://doi.org/10.1007/BF02309012
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DOI: https://doi.org/10.1007/BF02309012