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Hemt’s capability for millimeter wave applications

PotentialitÉS et Performances des Hemts Pour Applications en Gamme D’onde MillimÉtrique

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Abstract

This paper presents a tutorial review on the High Electron Mobility Transistors (HEMTs)for low-noise and power applications at millimeter wave range frequencies. The major parameters to achieve high performance with such devices are discussed. Present status on power and noise performances is given for InAlAs/InGaAs HEMTs on InP and GaAs substrates.

Résumé

Ce papier présente un état actuel des performances de puissance et de bruit des transistors à effet de champ à gaz ďélectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dépendance des caractéristiques électriques de ces composants avec la structure de couche (matériaux employés, épaisseursï) et la géométric Enfin on compare les performances en fréquences de coupure, puissance et bruit de différentes structures de hemts (p-hemt, lm-hemt, mm-hemt).

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Authors and Affiliations

  1. Département Hyperfréquences & Semiconducteurs, Institut ďÉlectronique et de Microélectronique du Nord, Cité Scientifique, Avenue Poincaré, BP 69, 59652, Villeneuve ďAscq Cedex, France

    S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy & A. Cappy

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  1. S. Bollaert
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  2. Y. Cordier
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  3. M. Zaknoune
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  5. H. Happy
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  6. A. Cappy
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Bollaert, S., Cordier, Y., Zaknoune, M. et al. Hemt’s capability for millimeter wave applications. Ann. Télécommun. 56, 15–26 (2001). https://doi.org/10.1007/BF03002982

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