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International Conference on High-Performance Computing and Networking

HPCN-Europe 1994: High-Performance Computing and Networking pp 99–104Cite as

Three-dimensional simulation of semiconductor devices

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Part of the book series: Lecture Notes in Computer Science ((LNCS,volume 796))

Abstract

In this paper we will present methods for the simulation of semiconductor devices. The basic physical model, extended for the simulation of hetero junction devices is discussed. To get an acceptable CPU time, vectorization and parallelization is used in the numerical solution methods. For a demonstration of some possibilities of the simulation program, we have simulated an HBT and an IPG-FET.

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Authors and Affiliations

  1. Institut für Grundlagen der Elektrotechnik/Elektronik, Technische Universität Dresden, Mommsenstr. 13, D-01062, Dresden

    Wilfried Klix & Ralf Dittmann

  2. Fachbereich Elektrotechnik, Hochschule für Technik und Wirtschaft Dresden, Friedrich-List-Platz 1, D-01069, Dresden

    Roland Stenzel

Authors
  1. Wilfried Klix
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  2. Ralf Dittmann
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  3. Roland Stenzel
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Editor information

Wolfgang Gentzsch Uwe Harms

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© 1994 Springer-Verlag Berlin Heidelberg

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Klix, W., Dittmann, R., Stenzel, R. (1994). Three-dimensional simulation of semiconductor devices. In: Gentzsch, W., Harms, U. (eds) High-Performance Computing and Networking. HPCN-Europe 1994. Lecture Notes in Computer Science, vol 796. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0020355

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  • DOI: https://doi.org/10.1007/BFb0020355

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-57980-9

  • Online ISBN: 978-3-540-48406-6

  • eBook Packages: Springer Book Archive

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