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Low Voltage High Output Impedance Bulk-Driven Quasi-Floating Gate Self-Biased High-Swing Cascode Current Mirror

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Abstract

A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of \({\pm }0.2\,\hbox {V}\). To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to \(250\,{\upmu }\mathrm{A}\) with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as \(240\,\Omega \) and \(19.5\,\hbox {G}\Omega \), respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC \(0.18\,\upmu \mathrm{m}\) technology.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Kurukshetra, 136119, Haryana, India

    Nikhil Raj & Anil Kumar Gupta

  2. Department of Computer Application, National Institute of Technology, Kurukshetra, 136119, Haryana, India

    Ashutosh Kumar Singh

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  1. Nikhil Raj
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Correspondence to Nikhil Raj.

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Raj, N., Singh, A.K. & Gupta, A.K. Low Voltage High Output Impedance Bulk-Driven Quasi-Floating Gate Self-Biased High-Swing Cascode Current Mirror. Circuits Syst Signal Process 35, 2683–2703 (2016). https://doi.org/10.1007/s00034-015-0184-4

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