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An integrated memory-disk system with buffering adapter and non-volatile memory

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Abstract

Next generation non-volatile memory devices are promising replacements for DRAM and Flash memories for mobile devices because of their energy efficiency and non-volatile characteristics. In this paper, we propose a new memory hierarchy system for next-generation non-volatile memory devices that is called an integrated memory-disk (IM-D) structure. It can merge a conventional main memory layer and a disk storage layer into a single memory layer using Phase change memory (PCM) and Flash memories. The IM-D architecture, consisting of a dual buffering IM-D adapter to improve the limited endurance and latencies, an array of PCM/Flash hybrid memories, and an associated memory management module called the IM-D translation layer in the operating system, is designed to utilize the advantages of next-generation non-volatile memory devices and at the same time overcome some shortcomings, like the asymmetric read/write access latencies and limited endurance, of a conventional memory hierarchy system. In the IM-D architecture, we propose an array of PCM/Flash hybrid memories and a migration scheme to enhance the cost effective performance and to reduce access latency. Our experimental results show that the miss rate of the proposed IM-D adapter is reduced by 49 % as compared with the conventional memory module, and the write count is reduced by 60.15 %. In addition, the access latency of the IM-D storage is improved by 45.3 %.

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Acknowledgments

This work was supported by Samsung Electronics Co. “Designing HW Adapter for PRAM based Main Memory” project.

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Authors and Affiliations

  1. Yonsei University, Seoul, South Korea

    Su-Kyung Yoon, Mei-Ying Bian & Shin-Dug Kim

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  1. Su-Kyung Yoon
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  2. Mei-Ying Bian
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  3. Shin-Dug Kim
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Correspondence to Shin-Dug Kim.

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Yoon, SK., Bian, MY. & Kim, SD. An integrated memory-disk system with buffering adapter and non-volatile memory. Des Autom Embed Syst 17, 609–626 (2013). https://doi.org/10.1007/s10617-014-9152-7

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  • DOI: https://doi.org/10.1007/s10617-014-9152-7

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