Skip to main content
Log in

Designing Nanoscale Logic Circuits Based on Markov Random Fields

  • Published:
Journal of Electronic Testing Aims and scope Submit manuscript

Abstract

As devices and operating voltages are scaled down, future circuits will be plagued by higher soft error rates, reduced noise margins and defective devices. A key challenge for the future is retaining high reliability in the presence of faulty devices and noise. Probabilistic computing offers one possible approach. In this paper we describe our approach for mapping circuits onto CMOS using principles of probabilistic computation. In particular, we demonstrate how Markov random field elements may be built in CMOS and used to design combinational circuits running at ultra low supply voltages. We show that with our new design strategy, circuits can operate in highly noisy conditions and provide superior noise immunity, at reduced power dissipation. If extended to more complex circuits, our approach could lead to a paradigm shift in computing architecture without abandoning the dominant silicon CMOS technology.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. J. Besag, “Spatial Interaction and the Statistical Analysis of Lattice Systems,” J. R. Stat. Soc., Ser. B, vol. 36, no. 3, pp. 192–236, 1994.

    MathSciNet  Google Scholar 

  2. G.K. Celler and S. Cristoloveanu, “Frontiers of Silicon-on-insulator,” J. Appl. Physi., vol. 93, pp. 4955–4978, May 2003.

    Article  Google Scholar 

  3. R. Chellappa, Markov Random Fields: Theory and Applications, Academic, 1993.

  4. T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase, “Ultimately Thin Double-gate Soi Mosfets,” IEEE Trans. Electron Devices, vol. 50, pp. 830–838, March 2003.

    Article  Google Scholar 

  5. H. Iwai, “The Future of CMOS Downscaling,” chapter in S. Luryi, J.M. Xu, and A. Zaslavsky (eds.), Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, New York: Wiley, 2004, pp. 23–33.

    Google Scholar 

  6. S. Kullback, Information Theory and Statistics, New York: Dover, 1969.

    Google Scholar 

  7. S.Z. Li, Markov Random Field Modeling in Computer Vision, Berlin Heidelberg New York: Springer, 1995.

    Google Scholar 

  8. H. Li, J. Mundy, W.R. Patterson, D. Kazazis, A. Zaslavsky, and R.I. Bahar, “A Model for Soft Errors in the Subthreshold Cmos Inverter,” in Proceedings of Workshop on System Effects of Logic Soft Errors, Nov. 2006.

  9. K.K. Likharev, “Single-electron Devices and their Applications,” Proc. I.E.E.E., vol. 87, no. 4, pp. 606–632, April 1999.

    Google Scholar 

  10. S. Luryi, J.M. Xu, and A. Zaslavsky eds. Future Trends inMicroelectronics: The Nano, the Giga, and the Ultra. New York: Wiley, 2004.

  11. K. Murphy, Y. Weiss, and M. Jordan, “Loopy Belief Propagation for Approximate Inference: an Empirical Study,” in Proceedings of Uncertainty in AI, pp. 467–475, 1999.

  12. S. Narendra, V. De, S. Borkar, D.A. Antoniadis, and A.P. Chandrakasan, “Full-chip Subthreshold Leakage Power Prediction and Reduction Techniques for Sub-0.18 μm Cmos,” IEEE J. Solid-state Circuits, vol. 39, pp. 501–510, March 2004.

    Article  Google Scholar 

  13. K. Nepal, R.I. Bahar, J. Mundy, W.R. Patterson, and A. Zaslavsky, “Designing Logic Circuits for Probabilistic Computation in the Presence of Noise,” in Proceedings of Design Automation Conference, pp. 485–490, June 2005.

  14. K. Nepal, R.I. Bahar, J. Mundy, W.R. Patterson, and A. Zaslavsky, “MRF Reinforcer: A Probabilistic Element for Space Redundancy in Nanoscale Circuits,” IEEE Micro, vol. 26, no. 5, pp. 19–27, Sept–Oct.

  15. V.M. Polyakov and F. Schwierz, “Excessive Noise in Nanoscaled Double-gate Mosfets: A Monte Carlo Study,” Semicond. Sci. Technol., vol. 19, no. 4, pp. 145–147, 2004.

    Article  Google Scholar 

  16. R. Sarpeshkar, T. Delbrueck, and C.A. Mead, “White Noise in Mos Transistors and Resistors,” IEEE Circuits Devices Mag., vol. 6, pp. 23–29, Nov 1993.

    Article  Google Scholar 

  17. E. Suzuki, K. Ishii, S. Kanemaru, T. Maeda, T. Tsutsumi, T. Sekigawa, K. Nagai, and H. Hiroshima, “Highly Suppressed Short-channel Effects in Ultrathin Soi N-mosfets,” IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 354–359, Feb. 2000.

    Article  Google Scholar 

  18. ITRS, http://www.public.itrs.net, 2004 (latest update).

  19. H.S.P. Wong, “Beyond the Conventional Transistor,” IBM J. Res. Develop., vol. 46, no. 2–3, pp. 133–168, 2002.

    Article  Google Scholar 

  20. J. Yedidia, W. Freeman, and Y. Weiss,“ Understanding Belief Propagation and its Generalizations,” in International Joint Conference on AI, 2001. Distinguished Lecture.

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to K. Nepal.

Additional information

Editor: M. Tehranipoor

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nepal, K., Bahar, R.I., Mundy, J. et al. Designing Nanoscale Logic Circuits Based on Markov Random Fields. J Electron Test 23, 255–266 (2007). https://doi.org/10.1007/s10836-006-0553-9

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10836-006-0553-9

Keywords

Navigation