Abstract
In this paper we present a design methodology that allows a dramatic reduction of the dependency on process variation, yielding to a new version of this BICS. Taking advantage of a 130 nm VLSI CMOS technology, the proposed BICS has a peak-to-peak dispersion lower than 10% of its output full-scale range. It makes it more suitable to implement the test functionality while maintaining the initial BICS intrinsic performances. The built-in self-test methodology is illustrated by monitoring the supply current of Low-Noise Amplifiers (LNAs). Measurements confirm the BICS’s transparency relative to the circuit-under-test (CUT) and its accuracy.
Similar content being viewed by others
References
Al-Qutayri MA (1995) analogue circuit testing by a supply current monitor. IMST Workshop. Grenoble, France, June 20–22, 1995
Allen PE, Holberg DR (2002) CMOS analog circuit design. 2nd edn. Oxford University Press, New York, USA
Brandolini M, Rossi P, Manstretta D, Svelto F (2005) Toward multistandard mobile terminals fully integrated receivers requirements and architectures. IEEE Trans Microwave Theor Tech 53(3):1026–1038 (March 2005)
Gopalan A, Margala M, Mukund PR (2005) A current based self-test methodology for RF front-end circuits. Microelectro J 36:1091–1102
Gutierrez JA, Callaway EH (2003) Low-rate wireless personal area networks. IEEE, New York
HCMOS9GP Design Kit, ST Microelectronics, 2003
Kheriji R, Danelon V, Carbonero JL, Mir S (2005) Optimising test sets for RF components with a defect-oriented approach. Design Automation and Test Conference in Europe, Munich, Germany, pp 400–403 (7–11 March 2005)
Levi MW (1981) CMOS is most testable. IEEE Proceedings ITC’81, Washington DC, USA, pp 217–220
Maidon Y, Deval Y, Fremont H, Dom JP (1996) Using IDD to analyse Analogue Faults and Development of a sensor, Proceeding of MM’96 Symposium. Austin, USA, pp 100–103
Maidon Y, Deval Y, Fouillat P, Tomas J, Dom JP (1996) On-chip IDDX sensor. IDDQ 1996 Digest of Papers. Washington DC, USA, pp 64–67
Maidon Y, Deval Y, Begueret JB, Tomas J, Dom JP (1997) 3.3 V CMOS built-in current sensor. Electron Lett 33(7):345–346
Maidon Y, Deval Y, Bégueret J-B, Dom J-P (1998) High sensitivity CMOS BICS. IEEE European Test Workshop (ETW’98). Stiges, Spain, pp 75–78 (May 1998)
Pineda de Gyvez J, Gronthoud G, Amine R (2003) VDD ramp testing for rf circuits. International Test Conference 2003. Charlotte, NC, USA, pp 651–658
Razavi B (2000) Design of analog CMOS integrated circuits. McGraw-Hill, USA (Preliminary Edition)
Soldo A, Gopalan A, Mukund PR, Margala M (2004) A current sensor for on-chip, non-intrusive testing of RF systems. International Conference on VLSI Design VLSID, pp 1023–1026
Tiebout M, Paparisto E (2002) LNA Design for a Fully Integrated CMOS single chip UMTS transceiver. 28th European Solid-State Circuits Conference. Florence, Italy, pp 835–838, 24–26 September 2002
Van Lammeren JPM (1998) ICCQ: a test method for analogue VLSI Based on current monitoring. IEEE CTAMS’98 Compendium of Papers. Paris, France, pp 49–53
Vasquez JR, Pineda de Gyvez J (2004) Built in current sensor for ΔIDDQ testing. IEEE J Solid-State Circuit 39(3):511–518 (March 2004)
Vidojkovic V, van der Tang J, Hannsen E, Leeuwenburgh A, van Roermund A (2004) Fully-integrated DECT/Bluetooth multi-band LNA in 0.18 um CMOS. IEEE Int Symp Circuits Syst Proc (ISCAS) 1:565–568
Wang CS, Li WC, Wang CK (2005) A multi-band multi-standard RF front-end IEEE 802.16a for IEEE 802.16a and IEEE 802.11 a/b/g applications. IEEE Int Symp Circuits Syst Proc 4:3974–3977 (May 2005)
Acknowledgment
The authors thank STMicroelectronics, Centrale R&D, Crolles, France, for technical supports and wafer fabrication.
Author information
Authors and Affiliations
Corresponding author
Additional information
Responsible Editor: M. Lubaszewski
Rights and permissions
About this article
Cite this article
Cimino, M., Lapuyade, H., De Matos, M. et al. A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications. J Electron Test 23, 593–603 (2007). https://doi.org/10.1007/s10836-007-5025-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10836-007-5025-3