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Wide Dynamic Range CMOS Amplifier Design for RF Signal Power Detection via Electro-Thermal Coupling

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Abstract

A differential temperature sensor for on-chip signal and DC power monitoring is presented for built-in testing and calibration applications. The amplifiers in the sensor are designed with class AB output stages to extend the dynamic range of the temperature/power measurements. Two high-gain amplification stages are used to achieve high sensitivity to temperature differences at points close to devices under test. Designed in 0.18 μm CMOS technology, the sensor has a simulated sensitivity that is tunable up to 210 mV/°C with a corresponding dynamic range of 13 °C. The sensor consumes 2.23 mW from a 1.8 V supply. A low-power version of the sensor was designed that consumes 1.125 mW from a 1.8 V supply, which has a peak sensitivity of 185.7 mV/°C over a 8 °C dynamic range.

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Acknowledgment

The authors thank Chun-hsiang Chang from Northeastern University for valuable discussions.

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Authors and Affiliations

  1. Department of Electrical & Computer Engineering, Northeastern University, 409 Dana Research Center, Boston, MA, 02115, USA

    Junpeng Feng & Marvin Onabajo

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  1. Junpeng Feng
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  2. Marvin Onabajo
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Correspondence to Marvin Onabajo.

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Responsible Editor: T. Xia

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Feng, J., Onabajo, M. Wide Dynamic Range CMOS Amplifier Design for RF Signal Power Detection via Electro-Thermal Coupling. J Electron Test 30, 101–109 (2014). https://doi.org/10.1007/s10836-013-5427-3

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  • DOI: https://doi.org/10.1007/s10836-013-5427-3

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