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Four-Port Network Parameters Extraction Method for Partially Depleted SOI with Body-Contact Structure

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Abstract

This work presents a model parameter extraction method based on four-port network for RF SOI MOSFET modeling. The gate, drain, source and body terminals are served as four separate ports. Four-port measurement simplifies the determination of small-signal equivalent circuit model elements such as parameters related to the body terminal which become clear in the equivalent circuit analysis. The extraction method of the RF SOI MOSFET extrinsic parasitic elements was also presented. The accuracy of the model extraction was verified by measurement and simulation from 100 MHz to 20 GHz.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China under Grant 61331006.

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Correspondence to Jun Liu.

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Responsible Editor: T. Xia

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Liu, J., Huang, Y.P. & Lu, K. Four-Port Network Parameters Extraction Method for Partially Depleted SOI with Body-Contact Structure. J Electron Test 32, 763–767 (2016). https://doi.org/10.1007/s10836-016-5625-x

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  • DOI: https://doi.org/10.1007/s10836-016-5625-x

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