Abstract
This work presents a model parameter extraction method based on four-port network for RF SOI MOSFET modeling. The gate, drain, source and body terminals are served as four separate ports. Four-port measurement simplifies the determination of small-signal equivalent circuit model elements such as parameters related to the body terminal which become clear in the equivalent circuit analysis. The extraction method of the RF SOI MOSFET extrinsic parasitic elements was also presented. The accuracy of the model extraction was verified by measurement and simulation from 100 MHz to 20 GHz.
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Brinkhoff J, Rustagi SC, Shi J, Lin F (2007) MOSFET model extraction using 50 GHz four-port measurements. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 647–650
Han J, Je M, Shin H (2002) A simple and accurate method for extracting substrate resistance of RF MOSFETs. IEEE Electron Device Lett 23(7):434–436
Jen HM, Enz CC, Pehlke DR, Schroter M (1999) Accurate modeling and parameter extraction for mos transistors valid up to 10 GHz. IEEE Trans Electron Devices 46(11):2217–2227
Koolen MCAM, Geelen, JAM, Versleijen MPJG (1991) An improved DC-embedding technique for on-wafer high-frequency characterization. In: Proc. Bipolar circuits and technology meeting, pp 188–191
Lee S (2005) Accurate rf extraction method for resistances and inductances of sub-0.1 μm CMOS transistors. Electron Lett 41(24):1325–1327
Lee BJ, Kim K, Yu CG et al (2005) Effects of gate structures on the RF performance in PD SOI MOSFETs. IEEE Microwave Wireless Compon Lett 15(4):223–225
Wu SD, Huang GW, Chen KM, Chang CY, Tseng HC, Hsu TL (2005) Extraction of substrate parameters for rf mosfets based on four-port measurement. IEEE Microwave Wireless Compon Lett 15(6):437–439
Wu SD, Huang GW, Cheng LP, Wen SY, Chang CY (2003) Characterization of 2-port configuration MOSFETs amplifiers by 4-port measurement. In: Proc. Asia-Pacific Microwave Conf, vol. 3, pp 1431–1433
Yang MT, Ho PPC, Wang YJ, Yeh TJ, Chia YT (2003) Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 369–372
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This work was supported by the National Natural Science Foundation of China under Grant 61331006.
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Liu, J., Huang, Y.P. & Lu, K. Four-Port Network Parameters Extraction Method for Partially Depleted SOI with Body-Contact Structure. J Electron Test 32, 763–767 (2016). https://doi.org/10.1007/s10836-016-5625-x
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DOI: https://doi.org/10.1007/s10836-016-5625-x