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Design of RF MEMS Based Oscillatory Neural Network for Ultra High Speed Associative Memories

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Abstract

Microelectromechanical systems are utilized alongside with transistor amplifiers and resistive connections for implementing of oscillatory associative memories. Phase locking is studied in such a network and all requirements of the circuit level implementation are satisfied. A very high gain trans-impedance amplifier operating in 1 GHz in addition to a novel automatic amplitude control circuit is employed to remove amplitude dynamics of the system. Requiring resonator characteristics are extracted and calculated as well. A new method for initialization of the network is proposed. Each neuron consumes 1.08 mW from a 1.8 V power supply. The convergence time of a typical network trained by Hebbian rule is less than 1.5 ns which results in an ultra high speed analog signal processing system.

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Acknowledgments

This paper is a part of a project supported by Iranian National Science Foundation (INSF).

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Authors and Affiliations

  1. Department of Engineering, Ilam University, Pazhouhesh Blv., Ilam, Iran

    Masoud Baghelani

  2. Sahand University of Technology, Sahand New Town, Tabriz, Iran

    Afshin Ebrahimi & Habib Badri Ghavifekr

Authors
  1. Masoud Baghelani
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  2. Afshin Ebrahimi
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  3. Habib Badri Ghavifekr
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Corresponding author

Correspondence to Afshin Ebrahimi.

Appendix: Circuit Parameters

Appendix: Circuit Parameters

See Table 1.

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Baghelani, M., Ebrahimi, A. & Ghavifekr, H.B. Design of RF MEMS Based Oscillatory Neural Network for Ultra High Speed Associative Memories. Neural Process Lett 40, 93–102 (2014). https://doi.org/10.1007/s11063-013-9312-y

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