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Spin-Based Quantum Dot Quantum Computing in Silicon

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Abstract

The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We discuss the pros and cons of using silicon, present recent advances, and outline challenges.

PACS: 03.67.Pp, 03.67.Lx, 85.35.Be, 73.21.La

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Authors and Affiliations

  1. Physics Department, University of Wisconsin-Madison, Madison, WI, 53706, USA

    Mark A. Eriksson, Mark Friesen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker & Charles Tahan

  2. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    P. M. Mooney, J. O. Chu & S. J. Koester

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  1. Mark A. Eriksson
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  2. Mark Friesen
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  3. Susan N. Coppersmith
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  4. Robert Joynt
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  5. Levente J. Klein
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  7. Charles Tahan
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  8. P. M. Mooney
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  9. J. O. Chu
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  10. S. J. Koester
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Eriksson, M.A., Friesen, M., Coppersmith, S.N. et al. Spin-Based Quantum Dot Quantum Computing in Silicon. Quantum Information Processing 3, 133–146 (2004). https://doi.org/10.1007/s11128-004-2224-z

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