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Estimations of phonon-induced decoherence in silicon–germanium triple quantum dots

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Abstract

The decoherence and dephasing rate of charge qubits in systems based on double and triple SiGe quantum dots are studied. At the short time limit, electron–phonon interaction causes an incomplete decay of the off-diagonal density matrix elements. Long-time relaxation decay dominates over dephasing at large times. The triple quantum dot system with the same interdot distance demonstrates lower relaxation rate in the wide range of parameters.

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Authors and Affiliations

  1. NIX, 19, Zvezdny blvd, 129085 , Moscow, Russia

    Alexander Yu. Vasiliev & Leonid Fedichkin

  2. Institute of Physics and Technology, Russian Academy of Sciences, 34 Nahimovskii pr., 117218 , Moscow, Russia

    Leonid Fedichkin

  3. Dept. of Theoretical Physics, Moscow Institute of Physics and Technology, 9 Institutsky per., Dolgoprudny, Moscow Region , 141700, Russia

    Alexander Yu. Vasiliev & Leonid Fedichkin

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  1. Alexander Yu. Vasiliev
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  2. Leonid Fedichkin
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Correspondence to Leonid Fedichkin.

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Vasiliev, A.Y., Fedichkin, L. Estimations of phonon-induced decoherence in silicon–germanium triple quantum dots. Quantum Inf Process 13, 1893–1905 (2014). https://doi.org/10.1007/s11128-014-0780-4

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  • DOI: https://doi.org/10.1007/s11128-014-0780-4

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