Skip to main content
Log in

A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

  • Research Papers
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

Abstract

A fully differential transimpedance amplifier (TIA) with integrated differential photodetector in standard CMOS technologies has been realized for optical receivers in optical communications and optical interconnects. And a novel, fully differential photodetector aiming to convert the incident light into a pair of fully differential photo-generated currents and ensure the differential symmetry on circuit configuration and model has also been proposed for the differential TIA to achieve the fully differential characteristic. Theoretical analysis and simulation results both indicate that the fully differential TIA reaches a higher bandwidth than a conventional one and at the same time a doubled sensitivity. Based on this new TIA, a monolithic, fully differential optoelectronic integrated receiver was designed and implemented in a Chartered 3.3 V, 0.35 μm standard CMOS process. It demonstrates 98.75 dBΩ transimpedance gain, and 0.334 μA equivalent input integrated referred noise current from 1 Hz up to −3 dB frequency. The power dissipation from a single 3.3 V supply is 100 mW for the TIA-LIA (limiting amplifier)-combination plus 138 mW for the 50 ω output buffer. At 850 nm wavelength, the optical receiver achieves a 1.1 GHz 3 dB bandwidth, and can handle bitrates up to 1.6 Gbit/s for −12.2 dBm peak-peak optical power and 231−1 PRBS (pseudorandom bit sequency) input signal.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Hermans C, Tavernier F, Steyaert M. A gigabit optical receiver with monolithically integrated photodiode in 0.18 μm CMOS. In: Proceedings of the 32nd European Solid-State Circuits Conference (ESSCIRC), Montreux, Switzerland, 2006. 476–479

  2. Hermans C, Michiel S J. A high-speed 850-nm optical receiver front-end in 0.18 μm CMOS. IEEE J Solid-State Circ, 2006, 41: 1606–1614

    Article  Google Scholar 

  3. Jutzi M, Grözing M, Gaugler E, et al. 2-Gb/s CMOS optical integrated receiver with a spatially modulated photodetector. IEEE Photon Tech Lett, 2005, 17: 1268–1270

    Article  Google Scholar 

  4. Kiziloglu K, Seetharaman S, Glass K W, et al. Fully differential receiver chipset for 40 Gb/s applications using GaInAs/InP single heterojunction bipolar transistors. In: Proceedings of the 21st International Conference on Computer Design, California, America, 2003. 462–466

  5. Razavi B. Design of Integrated Circuits for Optical Communications. New York: The McGraw-Hill Companies, Inc., 2003. 100–103

    Google Scholar 

  6. Yu C L, Mao L H, Song R L, et al. Design and implementation of an optoelectronic integrated receiver in standard CMOS process. Chin J Semiconduct, 2007, 28: 1198–1203

    Google Scholar 

  7. Razavi B. Design of Analog CMOS Integrated Circuits. New York: The McGraw-Hill Companies, Inc., 2001. 121–131

    Google Scholar 

  8. Johns D A, Martin K. Analog Integrated Circuit Design. New York: John Wiley & Sons, Inc., 1997. 179–182

    Google Scholar 

  9. Das M B, Chen J W, John E. Designing optoelectronic integrated circuit (OEIC) receivers for high sensitivity and maximally flat frequency response. IEEE J Lightwave Tech, 1995, 13: 1876–1884

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to ChangLiang Yu.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yu, C., Mao, L., Xiao, X. et al. A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects. Sci. China Inf. Sci. 54, 1300–1311 (2011). https://doi.org/10.1007/s11432-010-4142-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11432-010-4142-2

Keywords

Navigation