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Resistance switching for RRAM applications

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Abstract

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

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Authors and Affiliations

  1. Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (ITRI), Chutung, Hsinchu, Taiwan, China

    Frederick T. Chen, HengYuan Lee, YuSheng Chen, YenYa Hsu, WeiSu Chen, PeiYi Gu, WenHsing Liu, SuMin Wang, ChenHan Tsai, ShyhShyuan Sheu & MingJinn Tsai

  2. Institute of Electronics Engineering, National Tsing Hua University, Taiwan, China

    YuSheng Chen

  3. Institute of Microelectronics, Peking University, Beijing, 100084, China

    LiJie Zhang & Ru Huang

  4. Department of Chemical and Materials Engineering, Ming Shin University of Science and Technology, Taiwan, China

    PangShiu Chen

Authors
  1. Frederick T. Chen
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  2. HengYuan Lee
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Correspondence to Frederick T. Chen.

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Chen, F.T., Lee, H., Chen, Y. et al. Resistance switching for RRAM applications. Sci. China Inf. Sci. 54, 1073–1086 (2011). https://doi.org/10.1007/s11432-011-4217-8

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