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High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

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Abstract

The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f max. The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are demonstrated. Meanwhile, the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover, the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L 2g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs, C gd and C ds. At ballistic transport limit the f T and f max are almost 10 times larger. The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Gang Du, XiaoYan Liu & RuQi Han

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  1. Gang Du
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  2. XiaoYan Liu
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  3. RuQi Han
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Correspondence to Gang Du.

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Du, G., Liu, X. & Han, R. High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs. Sci. China Inf. Sci. 54, 1756–1761 (2011). https://doi.org/10.1007/s11432-011-4267-y

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  • DOI: https://doi.org/10.1007/s11432-011-4267-y

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