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Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure

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Abstract

The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage performances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BVGS of power BSIT has been increased to 110 V from previous value of 50–60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BVGS and blocking voltage V block are also represented in the paper.

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Authors and Affiliations

  1. School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, China

    YongShun Wang, JingJing Feng, ChunJuan Liu, ZiTing Wang, ZaiXing Wang & CaiZhen Zhang

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  1. YongShun Wang
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  2. JingJing Feng
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  3. ChunJuan Liu
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  4. ZiTing Wang
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  5. ZaiXing Wang
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  6. CaiZhen Zhang
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Correspondence to YongShun Wang.

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Wang, Y., Feng, J., Liu, C. et al. Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure. Sci. China Inf. Sci. 55, 962–970 (2012). https://doi.org/10.1007/s11432-011-4523-1

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  • DOI: https://doi.org/10.1007/s11432-011-4523-1

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