Abstract
A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample-and-hold circuit, the KTC noise on FD node can be effectively cancelled by correlated double sampling operation. The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size. A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18 μm CMOS process. The chip active area is 5 mm × 7 mm with a pixel size of 14 μm × 14 μm. The developed sensor achieves a read noise level as low as 14.8e- while attaining a high fill factor of 40%. The full well capacity can contain 30840e- and the resulting signal dynamic range is 66 dB.
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References
Sugiyama Y, Takumi M, Toyoda H, et al. A high-speed CMOS image sensor with profile data acquiring function. IEEE J Solid-State Circuit, 2005, 40: 2816–2823
Cremers B, Agarwal M, Walschap T, et al. A high speed pipelined snapshot CMOS image sensor with 6.4 Gpixel/s data rate. In: International Image Sensor Workshop, Bergen, 2009. 70–72
Furuta M, Nishikawa Y, Inoue T, et al. A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters. IEEE J Solid-State Circuit, 2007, 42: 766–774
Krymski A I, Tu N. A 9-V/Lux-s 5000-frames/s 512 × 512 CMOS sensor. IEEE Trans Electron Devices, 2003, 50: 136–143
Bock N, Krymski A, Sarwari A, et al. A wide-VGA CMOS image sensor with global shutter and extended dynamic range. In: IEEE Workshop on Charge Coupled Devices and Advanced Image Sensors, Karuizawa, 2005. 222–225
Takayanagi I, Mo Y, Ando H, et al. A 600 × 600 pixel, 500 fps CMOS image sensor with a 4.44 μm pinned photodiode 5-transistor global shutter pixel. In: International Image Sensor Workshop, Ogunquit, Maine, 2007. 278–290
Wang X Y, Bogaerts J, Vanhorebeek G, et al. A 2.2 M CMOS image sensor for high speed machine vision application. In: Proceedings of SPIE-IS&T, San Jose, 2010. 75360M
Yasutomi K, Itoh S, Kawahito S, et al. Two-stage charge transfer pixel using pinned diodes for low-noise global shutter imaging. In: International Image Sensor Workshop, Bergen, 2009. 333–336
Yasutomi K, Itoh S, Kawahito S. A 2.7e- temporal noise 99.7% shutter efficiency 92 dB dynamic range CMOS image sensor with dual global shutter pixels. In: IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, 2010. 398–399
Yasutomi K, Itoh S, Kawahito S. A two-stage charge transfer active pixel CMOS image sensor with low-noise global shuttering and a dual-shuttering mode. IEEE Trans Electron Devices, 2011, 58: 740–747
Nixon R H, Kemeny S E, Pain B, et al. 256 × 256 CMOS active pixel sensor camera-on-a-chip. IEEE J Solid-State Circuit, 1996, 31: 2046–2050
Takahashi H, Noda T, Matsuda T, et al. A 1/2.7-in 2.96 M pixel CMOS image sensor with double CDS architecture for full high-definition camcorders. IEEE J Solid-State Circuit, 2007, 42: 2960–2967
Cheon J, Han G. Noise analysis and simulation method for a single-slope ADC with CDS in a CMOS image sensor. IEEE Trans Circuit Syst I-Regul Pap, 2008, 55: 2980–2987
Inoue I, Tanaka N, Yamashita H, et al. Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager. IEEE Trans Electron Devices, 2003, 50: 43–47
Mutoh H. 3-D optical and electrical simulation for CMOS image sensors. IEEE Trans Electron Devices, 2003, 50: 19–25
Shin B, Park S, Shin H. The effect of photodiode shape on charge transfer in CMOS image sensors. Solid-State Electron, 2010, 54: 1416–1420
Kawai N, Kawahito S. Noise analysis of high-gain, low-noise column readout circuits for CMOS image sensors. IEEE Trans Electron Devices, 2004, 51: 185–194
Kawai N, Kawahito S. A low-noise signal readout circuit using double-stage noise cancelling architecture for CMOS image sensors. In: IEEE Workshop on Charge Coupled Devices and Advanced Image Sensors, Karuizawa, 2005. 27–30
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Zhou, Y., Cao, Z., Qin, Q. et al. A high speed 1000 fps CMOS image sensor with low noise global shutter pixels. Sci. China Inf. Sci. 57, 1–8 (2014). https://doi.org/10.1007/s11432-013-4889-3
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DOI: https://doi.org/10.1007/s11432-013-4889-3