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1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells

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References

  1. Green M A, Emery K A, Hishikawa Y, et al. Solar cell efficiency tables (version 45). Prog Photovolt Res Appl, 2015, 23: 1–9

    Article  Google Scholar 

  2. Stan M A, Aiken D, Sharps P R, et al. The development of > 28% efficient triple-junction space solar cells at Emcore photovoltaics. In: Proceedings of the 3rd World Conference on Photovolroic Energy Conversion, Osaka, 2003. 662–665

    Google Scholar 

  3. Cornfeld A B, Aiken D, Cho B, et al. Development of a four sub-cell inverted metamorphic multi-junction (IMM) highly efficient AM0 solar cell. In: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, 2010

    Google Scholar 

  4. Dai P, Ji L, Tan M, et al. Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE. Sol Energ Mater Sol Cells, 2017, 171: 118–122

    Article  Google Scholar 

  5. Maximenko S I, Messenger S R, Hoheisel R, et al. Characterization of high fluence irradiations on advanced triple junction solar cells. In: Proceedings of the 39th IEEE Photovoltaic Specialists Conference, Tampa, 2013. 2797–2800

    Google Scholar 

  6. Sze S M, Ng K K. Physics of Semiconductor Devices. 3rd ed. Hoboken: John Wiley & Sons, 2006. 728–729

    Book  Google Scholar 

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61534008, 11675259, 11275262, 61640401), 1000-Talent Project of Xinjiang Technical Institute of Physical & Chemical, Chinese Academy of Sciences (Grant No. Y52H121101).

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Authors and Affiliations

  1. Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China

    Xiaofan Zhao, Maliya Heini, Momin Sailai, Abuduwayiti Aierken, Qi Guo & Yudong Li

  2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, 830011, China

    Xiaofan Zhao, Maliya Heini, Momin Sailai, Abuduwayiti Aierken, Qi Guo & Yudong Li

  3. University of Chinese Academy of Sciences, Beijing, 100000, China

    Xiaofan Zhao & Momin Sailai

  4. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China

    Shulong Lu, Pan Dai, Yuanyuan Wu & Ming Tan

Authors
  1. Xiaofan Zhao
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  2. Maliya Heini
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  3. Momin Sailai
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  4. Abuduwayiti Aierken
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  5. Qi Guo
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  6. Yudong Li
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  7. Shulong Lu
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  8. Pan Dai
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  9. Yuanyuan Wu
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  10. Ming Tan
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Corresponding author

Correspondence to Abuduwayiti Aierken.

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The authors declare that they have no conflict of interest.

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11432_2017_9248_MOESM1_ESM.pdf

Figure 1 (a) Schematic cross-section of the device structure, (b) Simulated trajectory of electron beam across material using CASINO, (c) Normalized Voc as a function of electron fluence and displacement damage dose (d) Dark I-V curves before and after irradiation, (e) and (f) External Quantum Efficiency of InGaAsP/InGaAs double-junction and InGaAs single-junction solar cell before (black curves) and after irradiation (colored curves), respectively, at different electron fluence levels.

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Zhao, X., Heini, M., Sailai, M. et al. 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells. Sci. China Inf. Sci. 60, 120403 (2017). https://doi.org/10.1007/s11432-017-9248-2

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  • DOI: https://doi.org/10.1007/s11432-017-9248-2

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