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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

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References

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.

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Authors and Affiliations

  1. School of Aerospace Science and Technology, Xidian University, Xi’an, 710126, China

    Jinxin Zhang, Yunyi Yan, Hui Wang & Linxia Zhang

  2. Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China

    Hongxia Guo

  3. School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an, 710049, China

    Chaohui He & Pei Li

  4. Northwest Institution of Nuclear Technology, Xi’an, 710024, China

    Hongxia Guo & Fengqi Zhang

Authors
  1. Jinxin Zhang
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  2. Hongxia Guo
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  3. Fengqi Zhang
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  4. Chaohui He
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  5. Pei Li
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  6. Yunyi Yan
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  7. Hui Wang
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  8. Linxia Zhang
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Corresponding author

Correspondence to Hongxia Guo.

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The authors declare that they have no conflict of interest.

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Zhang, J., Guo, H., Zhang, F. et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci. China Inf. Sci. 60, 120404 (2017). https://doi.org/10.1007/s11432-017-9249-6

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  • DOI: https://doi.org/10.1007/s11432-017-9249-6

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