References
Fine B V, Bakker J P R, Dijkhuis J I. Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon. Phys Rev B, 2003, 12: 409–412
He L, Chen H, Sun P, et al. Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. Sci China Inf Sci, 2016, 59: 042402
Xiong S Z, Zhu M F. Fundamentals and Applications of Solar Cells. Beijing: Science Press, 2009
Zhuang Y Q, Sun Q. Noise and its Minimizing Technology in Semiconductor Devices. Beijing: National Defense Industry Press, 1993
Simoen E, Cretu B, Fang W, et al. Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices. Solid State Phenom, 2015, 242: 449–458
Liu E K, Zhu B S, Luo J S. Semiconductor Physics. Beijing: National Defense Industry Press, 2010
Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant No. 61106062), Fundamental Research Funds for the Central Universities (Grant No. JB181409), and Ankang College Youth Fund (Grant No. 2017AYQN06).
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Hu, L., He, L., Chen, H. et al. Defect characterization of amorphous silicon thin film solar cell based on low frequency noise. Sci. China Inf. Sci. 61, 069403 (2018). https://doi.org/10.1007/s11432-017-9360-7
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DOI: https://doi.org/10.1007/s11432-017-9360-7