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Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology

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References

  1. Deleonibus S. Looking into the future of nanoelectronics in the diversification efficient era. Sci China Inf Sci, 2016, 59: 061401

    Article  Google Scholar 

  2. Lin M, An X, Li M, et al. Ge surface passivation by GeO2 fabricated by N2O plasma oxidation. Sci China Inf Sci, 2015, 58: 042403

    Article  Google Scholar 

  3. Tang M R, Huang W, Li C, et al. Thermal stability of nickel germanide formed on tensile-strained Ge epilayer on Si substrate. IEEE Electron Device Lett, 2010, 31: 863–865

    Article  Google Scholar 

  4. Zhang Q C, Wu N, Osipowicz T, et al. Formation and thermal stability of nickel germanide on germanium substrate. Jpn J Appl Phys, 2005, 44: L1389–L1391

    Article  Google Scholar 

  5. Chou C H, Tsai Y H, Hsu C C, et al. Experimental realization of thermal stability enhancement of nickel germanide alloy by using TiN metal capping. IEEE Trans Electron Devices, 2017, 64: 2314–2320

    Article  Google Scholar 

  6. Kashihara K, Yamaguchi T, Okudaira T. Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition. In: Proceedings of International Workshop on Junction Technology, Shanghai, 2006. 176–179

    Google Scholar 

  7. Zhu S Y, Yu M B, Lo G Q, et al. Enhanced thermal stability of nickel germanide on thin epitaxial germanium by adding an ultrathin titanium layer. Appl Phys Lett, 2007, 91: 051905

    Article  Google Scholar 

  8. Zhang Y Y, Oh J, Li S G. Improvement of thermal stability of Ni germanide using a Ni-Pt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs. IEEE Trans Nanotechnol, 2010, 9: 258–263

    Article  Google Scholar 

  9. Kang M H, Zhang Y Y, Park K Y, et al. Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate. J Korean Phy Soc, 2009, 55: 221–226

    Article  Google Scholar 

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 60806033, 61534004, 61474004) and National Key Research and Development Plan (Grant No. 2016YFA0200504).

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Correspondence to Xia An or Ru Huang.

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Zhang, B., An, X., Liu, P. et al. Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology. Sci. China Inf. Sci. 61, 109401 (2018). https://doi.org/10.1007/s11432-018-9398-6

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  • DOI: https://doi.org/10.1007/s11432-018-9398-6

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