References
Deleonibus S. Looking into the future of nanoelectronics in the diversification efficient era. Sci China Inf Sci, 2016, 59: 061401
Lin M, An X, Li M, et al. Ge surface passivation by GeO2 fabricated by N2O plasma oxidation. Sci China Inf Sci, 2015, 58: 042403
Tang M R, Huang W, Li C, et al. Thermal stability of nickel germanide formed on tensile-strained Ge epilayer on Si substrate. IEEE Electron Device Lett, 2010, 31: 863–865
Zhang Q C, Wu N, Osipowicz T, et al. Formation and thermal stability of nickel germanide on germanium substrate. Jpn J Appl Phys, 2005, 44: L1389–L1391
Chou C H, Tsai Y H, Hsu C C, et al. Experimental realization of thermal stability enhancement of nickel germanide alloy by using TiN metal capping. IEEE Trans Electron Devices, 2017, 64: 2314–2320
Kashihara K, Yamaguchi T, Okudaira T. Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition. In: Proceedings of International Workshop on Junction Technology, Shanghai, 2006. 176–179
Zhu S Y, Yu M B, Lo G Q, et al. Enhanced thermal stability of nickel germanide on thin epitaxial germanium by adding an ultrathin titanium layer. Appl Phys Lett, 2007, 91: 051905
Zhang Y Y, Oh J, Li S G. Improvement of thermal stability of Ni germanide using a Ni-Pt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs. IEEE Trans Nanotechnol, 2010, 9: 258–263
Kang M H, Zhang Y Y, Park K Y, et al. Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate. J Korean Phy Soc, 2009, 55: 221–226
Acknowledgements
This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 60806033, 61534004, 61474004) and National Key Research and Development Plan (Grant No. 2016YFA0200504).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Zhang, B., An, X., Liu, P. et al. Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology. Sci. China Inf. Sci. 61, 109401 (2018). https://doi.org/10.1007/s11432-018-9398-6
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-018-9398-6