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Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs

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Abstract

This paper investigates the influence of the short-channel effects (SCEs) on the static noise margin (SNM) of 6T (6 transistors) SRAM composed of 2D MOSFETs. An analytical all-region I-V model for short-channel complementary 2D MOSFETs has been developed, and a simulation model has been built to calculate SNM with the consideration of SCEs and velocity saturation. The results show that there exists an optimal value of channel length (Lopt) where SNM reaches a maximum, and Lopt is approximately three times the scale length. In the region where L>Lopt, SNM increases slightly as L decreases because of velocity saturation, while in the region where L<Lopt, SNM decreases rapidly as L decreases as the SCEs are dominant. The worst case of SNM reduction due to the threshold voltage (VT) fluctuation is investigated, and the maximum VT tolerance is studied as a function of L. In an SRAM with a scale length of 5 nm, as L decreases from 15 nm to 5 nm, SNM decreases from 155 mV to 98 mV, and the maximum VT tolerance decreases from 126 mV to 105 mV.

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Acknowledgements

This work was supported by Applied Basic Research Programs of Science and Technology Department of Sichuan Province, China (Grant No. M110103012016JY0044).

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Authors and Affiliations

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Qian Xie, Chen Chen, Mingjun Liu, Shuang Xia & Zheng Wang

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  1. Qian Xie
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  2. Chen Chen
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  3. Mingjun Liu
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  4. Shuang Xia
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  5. Zheng Wang
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Correspondence to Qian Xie.

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Xie, Q., Chen, C., Liu, M. et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci. China Inf. Sci. 62, 62404 (2019). https://doi.org/10.1007/s11432-018-9429-2

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  • DOI: https://doi.org/10.1007/s11432-018-9429-2

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