Abstract
Two-dimensional layered materials (2DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 eV. Therefore, 2D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale 2D-TMDs.
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References
Liu Y, Weiss N O, Duan X, et al. Van der Waals heterostructures and devices. Nat Rev Mater, 2016, 1: 16042
Chhowalla M, Liu Z F, Zhang H. Two-dimensional transition metal dichalcogenide (TMD) nanosheets. Chem Soc Rev, 2015, 44: 2584–2586
Wang F K, Zhang Y, Gao Y, et al. 2D metal chalcogenides for IR photodetection. Small, 2019, 15: 1901347
Cai Z Y, Liu B, Zou X L, et al. Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures. Chem Rev, 2018, 118: 6091–6133
Xie C, Mak C, Tao X M, et al. Photodetectors based on two-dimensional layered materials beyond graphene. Adv Funct Mater, 2017, 27: 1603886
Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotechnol, 2011, 6: 147–150
Butler S Z, Hollen S M, Cao L Y, et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano, 2013, 7: 2898–2926
Yu L L, El-Damak D, Radhakrishna U, et al. Design, modeling, and fabrication of chemical vapor deposition grown MoS2 circuits with E-mode FETs for large-area electronics. Nano Lett, 2016, 16: 6349–6356
Wachter S, Polyushkin D K, Bethge O, et al. A microprocessor based on a two-dimensional semiconductor. Nat Commun, 2017, 8: 14948
Liu C S, Yan X, Song X F, et al. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications. Nat Nanotechnol, 2018, 13: 404–410
Liu C S, Chen H W, Hou X, et al. Small footprint transistor architecture for photoswitching logic and in situ memory. Nat Nanotechnol, 2019, 14: 662–667
Lan Y W, Chen P C, Lin Y Y, et al. Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors. Nanoscale Horiz, 2019, 4: 683–688
Chhowalla M, Shin H S, Eda G, et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem, 2013, 5: 263–275
Shivayogimath A, Thomsen J D, Mackenzie D M A, et al. A universal approach for the synthesis of two-dimensional binary compounds. Nat Commun, 2019, 10: 2957
Wang Y L, Li L F, Yao W, et al. Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt. Nano Lett, 2015, 15: 4013–4018
He Q Y, Li P J, Wu Z H, et al. Molecular beam epitaxy scalable growth of wafer-scale continuous semiconducting monolayer MoTe2 on inert amorphous dielectrics. Adv Mater, 2019, 349: 1901578
Ciarrocchi A, Avsar A, Ovchinnikov D, et al. Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide. Nat Commun, 2018, 9: 919
Baugher B W H, Churchill H O H, Yang Y, et al. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett, 2013, 13: 4212–4216
Li H, Wu J, Yin Z Y, et al. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets. Acc Chem Res, 2014, 47: 1067–1075
Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett, 2010, 105: 136805
Zhang Y, Ye J, Matsuhashi Y, et al. Ambipolar MoS2 thin flake transistors. Nano Lett, 2012, 12: 1136–1140
Martin S J, Walker A B, Campbell A J, et al. Electrical transport characteristics of single-layer organic devices from theory and experiment. J Appl Phys, 2005, 98: 063709
Qian X F, Liu J W, Fu L, et al. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science, 2014, 346: 1344–1347
Li D, Chen M Y, Sun Z Z, et al. Two-dimensional non-volatile programmable p-n junctions. Nat Nanotechnol, 2017, 12: 901–906
Gao Y, Liu Z B, Sun D M, et al. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils. Nat Commun, 2015, 6: 8569
Lee Y H, Zhang X Q, Zhang W, et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv Mater, 2012, 24: 2320–2325
Xu H, Zhang H M, Guo Z X, et al. High-performance wafer-scale MoS2 transistors toward practical application. Small, 2018, 14: 1803465
Xu H, Zhang H M, Liu Y W, et al. Controlled doping of wafer-scale PtSe2 films for device application. Adv Funct Mater, 2019, 29: 1805614
Fu D Y, Zhao X X, Zhang Y Y, et al. Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride. J Am Chem Soc, 2017, 139: 9392–9400
Poh S M, Zhao X, Tan S J R, et al. Molecular beam epitaxy of highly crystalline MoSe2 on hexagonal boron nitride. ACS Nano, 2018, 12: 7562–7570
Nakano M, Wang Y, Kashiwabara Y, et al. Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular beam epitaxy. Nano Lett, 2017, 17: 5595–5599
Kang K, Xie S E, Huang L J, et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature, 2015, 520: 656–660
Zhang X T, Choudhury T H, Chubarov M, et al. Diffusion-controlled epitaxy of large area coalesced WSe2 Monolayers on sapphire. Nano Lett, 2018, 18: 1049–1056
Song J G, Park J, Lee W, et al. Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition. ACS Nano, 2013, 7: 11333–11340
Shi M L, Chen L, Zhang T B, et al. Top-down integration of molybdenum disulfide transistors with wafer-scale uniformity and layer controllability. Small, 2017, 13: 1603157
Yang P F, Zou X L, Zhang Z P, et al. Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass. Nat Commun, 2018, 9: 979
Mak K F, Shan J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photon, 2016, 10: 216–226
Gong C H, Hu K, Wang X P, et al. 2D nanomaterial arrays for electronics and optoelectronics. Adv Funct Mater, 2018, 28: 1706559
Xia F N, Wang H, Xiao D, et al. Two-dimensional material nanophotonics. Nat Photon, 2014, 8: 899–907
Huo N J, Konstantatos G. Recent progress and future prospects of 2D-based photodetectors. Adv Mater, 2018, 30: 1801164
Lei S, Wen F, Li B, et al. Optoelectronic memory using two-dimensional materials. Nano Lett, 2015, 15: 259–265
Kshirsagar C U, Xu W C, Su Y, et al. Dynamic memory cells using MoS2 field-effect transistors demonstrating femtoampere leakage currents. ACS Nano, 2016, 10: 8457–8464
Zhang E, Wang W Y, Zhang C, et al. Tunable charge-trap memory based on few-layer MoS2. ACS Nano, 2015, 9: 612–619
Wang X D, Liu C S, Chen Y, et al. Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. 2D Mater, 2017, 4: 025036
Wang H, Yu L L, Lee Y H, et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett, 2012, 12: 4674–4680
Lee Y, Park S, Kim H, et al. Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging. Nanoscale, 2015, 7: 11909–11914
van der Zande A M, Huang P Y, Chenet D A, et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat Mater, 2013, 12: 554–561
Yu H, Liao M Z, Zhao W J, et al. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films. ACS Nano, 2017, 11: 12001–12007
Karvonen L, Säynätjoki A, Huttunen M J, et al. Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy. Nat Commun, 2017, 8: 15714
Najmaei S, Liu Z, Zhou W, et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat Mater, 2013, 12: 754–759
Liu Z, Amani M, Najmaei S, et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat Commun, 2014, 5: 5246
Fei L F, Lei S J, Zhang W B, et al. Direct TEM observations of growth mechanisms of two-dimensional MoS2 flakes. Nat Commun, 2016, 7: 12206
Smithe K K H, Suryavanshi S, Rojo M M, et al. Low variability in synthetic monolayer MoS2 devices. ACS Nano, 2017, 11: 8456–8463
Ling X, Lee Y H, Lin Y X, et al. Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett, 2014, 14: 464–472
Lim Y R, Song W, Han J K, et al. Wafer-scale, homogeneous MoS2 layers on plastic substrates for flexible visible-light photodetectors. Adv Mater, 2016, 28: 5025–5030
Huang J K, Pu J, Hsu C L, et al. Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano, 2014, 8: 923–930
Bao W Z, Cai X H, Kim D H, et al. High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. Appl Phys Lett, 2013, 102: 042104
Kobayashi Y, Sasaki S, Mori S, et al. Growth and optical properties of high-quality monolayer WS2 on graphite. ACS Nano, 2015, 9: 4056–4063
Tarasov A, Campbell P M, Tsai M Y, et al. Highly uniform trilayer molybdenum disulfide for wafer-scale device fabrication. Adv Funct Mater, 2014, 24: 6389–6400
Lin Y C, Zhang W J, Huang J K, et al. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. Nanoscale, 2012, 4: 6637–6641
Zhang Q, Wang X F, Shen S H, et al. Simultaneous synthesis and integration of two-dimensional electronic components. Nat Electron, 2019, 2: 164–170
Song X F, Zan W, Xu H, et al. A novel synthesis method for large-area MoS2 film with improved electrical contact. 2D Mater, 2017, 4: 025051
Luisier M, Lundstrom M, Antoniadis D A, et al. Ultimate device scaling: intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length. In: Proceedings of International Electron Devices Meeting, 2011
Low T, Li M F, Samudra G, et al. Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs. IEEE Trans Electron Device, 2005, 52: 2430–2439
Yu X, Kang J, Takenaka M, et al. Evaluation of mobility degradation factors and performance improvement of ultrathin-body germanium-on-insulator MOSFETs by GOI thinning using plasma oxidation. IEEE Trans Electron Device, 2017, 64: 1418–1425
Jin S, Fischetti M V, Tang T W. Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs. IEEE Trans Electron Device, 2007, 54: 2191–2203
Fiori G, Bonaccorso F, Iannaccone G, et al. Electronics based on two-dimensional materials. Nat Nanotechnol, 2014, 9: 768–779
Thiele S, Kinberger W, Granzner R, et al. The prospects of transition metal dichalcogenides for ultimately scaled CMOS. Solid-State Electron, 2018, 143: 2–9
Cao W, Jiang J K, Xie X J, et al. 2-D layered materials for next-generation electronics: opportunities and challenges. IEEE Trans Electron Device, 2018, 65: 4109–4121
Song X F, Guo Z X, Zhang Q C, et al. Progress of large-scale synthesis and electronic device application of two-dimensional transition metal dichalcogenides. Small, 2017, 13: 1700098
Lemme M C, Li L J, Palacios T, et al. Two-dimensional materials for electronic applications. MRS Bull, 2014, 39: 711–718
Kwon H, Jeon P J, Kim J S, et al. Large scale MoS2 nanosheet logic circuits integrated by photolithography on glass. 2D Mater, 2016, 3: 044001
Yu L, Zubair A, Santos E J G, et al. High-performance WSe2 complementary metal oxide semiconductor technology and integrated circuits. Nano Lett, 2015, 15: 4928–4934
Sachid A B, Tosun M, Desai S B, et al. Monolithic 3D CMOS using layered semiconductors. Adv Mater, 2016, 28: 2547–2554
Liu Y D, Ang K W. Monolithically integrated flexible black phosphorus complementary inverter circuits. ACS Nano, 2017, 11: 7416–7423
Desai S B, Madhvapathy S R, Sachid A B, et al. MoS2 transistors with 1-nanometer gate lengths. Science, 2016, 354: 99–102
Allain A, Kang J, Banerjee K, et al. Electrical contacts to two-dimensional semiconductors. Nat Mater, 2015, 14: 1195–1205
Das S, Chen H Y, Penumatcha A V, et al. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett, 2013, 13: 100–105
Yu L L, Lee Y H, Ling X, et al. Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. Nano Lett, 2014, 14: 3055–3063
Kappera R, Voiry D, Yalcin S E, et al. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2. APL Mater, 2014, 2: 092516
Lee S, Tang A, Aloni S, et al. Statistical study on the Schottky barrier reduction of tunneling contacts to CVD synthesized MoS2. Nano Lett, 2016, 16: 276–281
Hu Z H, Wu Z T, Han C, et al. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev, 2018, 47: 3100–3128
Kim H G, Lee H B R. Atomic layer deposition on 2D materials. Chem Mater, 2017, 29: 3809–3826
McDonnell S, Brennan B, Azcatl A, et al. HfO2 on MoS2 by atomic layer deposition: adsorption mechanisms and thickness scalability. ACS Nano, 2013, 7: 10354–10361
Zou X M, Wang J L, Chiu C H, et al. Interface engineering for high-performance top-gated MoS2 field-effect transistors. Adv Mater, 2014, 26: 6255–6261
Yang W, Sun Q Q, Geng Y, et al. The integration of sub-10 nm gate oxide on MoS2 with ultra low leakage and enhanced mobility. Sci Rep, 2015, 5: 11921
Azcatl A, McDonnell S, Kc S, et al. MoS2 functionalization for ultra-thin atomic layer deposited dielectrics. Appl Phys Lett, 2014, 104: 111601
Pu J, Yomogida Y, Liu K K, et al. Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett, 2012, 12: 4013–4017
Pu J, Funahashi K, Chen C H, et al. Highly flexible and high-performance complementary inverters of large-area transition metal dichalcogenide monolayers. Adv Mater, 2016, 28: 4111–4119
Dathbun A, Kim Y, Kim S, et al. Large-area CVD-grown sub-2 V ReS2 transistors and logic gates. Nano Lett, 2017, 17: 2999–3005
Zan W, Zhang Q C, Xu H, et al. Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices. Nano Res, 2018, 11: 3739–3745
Li S L, Tsukagoshi K, Orgiu E, et al. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Chem Soc Rev, 2016, 45: 118–151
Gong C, Colombo L, Wallace R M, et al. The unusual mechanism of partial fermi level pinning at metal-MoS2 interfaces. Nano Lett, 2014, 14: 1714–1720
Kang J H, Liu W, Sarkar D, et al. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys Rev X, 2014, 4: 031005
Ma N, Jena D. Charge scattering and mobility in atomically thin semiconductors. Phys Rev X, 2014, 4: 011043
Schwierz F. Graphene transistors: status, prospects, and problems. Proc IEEE, 2013, 101: 1567–1584
Amani M, Burke R A, Proie R M, et al. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene. Nanotechnology, 2015, 26: 115202
Zhang T B, Liu H, Wang Y, et al. Fast-response inverter arrays built on wafer-scale MoS2 by atomic layer deposition. Phys Status Solidi RRL, 2019, 13: 1900018
Zhang S M, Xu H, Liao F Y, et al. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors. Nanotechnology, 2019, 30: 174002
Das T, Chen X, Jang H, et al. Highly flexible hybrid CMOS inverter based on Si nanomembrane and molybdenum disulfide. Small, 2016, 12: 5720–5727
Chiu M H, Tang H L, Tseng C C, et al. Metal-guided selective growth of 2D materials: demonstration of a bottom-up CMOS inverter. Adv Mater, 2019, 31: 1900861
Liu W, Kang J H, Sarkar D, et al. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Nano Lett, 2013, 13: 1983–1990
Tosun M, Chuang S, Fang H, et al. High-gain inverters based on WSe2 complementary field-effect transistors. ACS Nano, 2014, 8: 4948–4953
Lin Z Y, Liu Y, Halim U, et al. Solution-processable 2D semiconductors for high-performance large-area electronics. Nature, 2018, 562: 254–258
Yu L, El-Damak D, Ha S, et al. Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2015
Yang R, Li H, Smithe K K H, et al. Ternary content-addressable memory with MoS2 transistors for massively parallel data search. Nat Electron, 2019, 2: 108–114
Liu J Q, Zeng Z Y, Cao X H, et al. Preparation of MoS2-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes. Small, 2012, 8: 3517–3522
Huang X, Zheng B, Liu Z D, et al. Coating two-dimensional nanomaterials with metal-organic frameworks. ACS Nano, 2014, 8: 8695–8701
Yin Z Y, Zeng Z Y, Liu J Q, et al. Memory devices using a mixture of MoS2 and graphene oxide as the active layer. Small, 2013, 9: 727–731
Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 2013, 8: 497–501
Huo N, Konstantatos G. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction. Nat Commun, 2017, 8: 572
Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7: 699–712
Chang Y H, Zhang W, Zhu Y, et al. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano, 2014, 8: 8582–8590
Zhou Y H, An H N, Gao C, et al. UV-Vis-NIR photodetector based on monolayer MoS2. Mater Lett, 2019, 237: 298–302
Xue Y Z, Zhang Y P, Liu Y, et al. Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano, 2016, 10: 573–580
Kim Y, Bark H, Kang B, et al. Wafer-scale substitutional doping of monolayer MoS2 films for high-performance optoelectronic devices. ACS Appl Mater Interfaces, 2019, 11: 12613–12621
Agarwal A, Lang J. Foundations of Analog and Digital Electronic Circuits. Amsterdam: Elsevier 2005
Cheng R, Bai J W, Liao L, et al. High-frequency self-aligned graphene transistors with transferred gate stacks. Proc Natl Acad Sci USA, 2012, 109: 11588–11592
Sanne A, Ghosh R, Rai A, et al. Radio frequency transistors and circuits based on CVD MoS2. Nano Lett, 2015, 15: 5039–5045
Chang H Y, Yogeesh M N, Ghosh R, et al. Large-area monolayer MoS2 for flexible low-power RF nanoelectronics in the GHz regime. Adv Mater, 2016, 28: 1818–1823
Gao Q G, Zhang Z F, Xu X L, et al. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nat Commun, 2018, 9: 4778
Acknowledgements
This work was supported by National Key Research and Development Program (Grant No. 2016-YFA0203900), Shanghai Municipal Science and Technology Commission (Grant No. 18JC1410300), and National Natural Science Foundation of China (Grant No. 61874154).
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Tang, H., Zhang, H., Chen, X. et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci. China Inf. Sci. 62, 220401 (2019). https://doi.org/10.1007/s11432-019-2651-x
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DOI: https://doi.org/10.1007/s11432-019-2651-x