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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61701114, 61941103), National Key Research and Development Program (Grant No. 2018YFB1801602), Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811), and China Scholarship Council (CSC).
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Zhou, P., Chen, J., Yan, P. et al. A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process. Sci. China Inf. Sci. 63, 229402 (2020). https://doi.org/10.1007/s11432-019-2732-1
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DOI: https://doi.org/10.1007/s11432-019-2732-1