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Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

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Abstract

Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate structure. Herein, we fabricated a dual-gate vertical transistor based on graphene/MoTe2/graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors.

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Acknowledgements

This work was supported in part by National Key Basic Research Program of China (Grant No. 2015CB921600), National Natural Science Foundation of China (Grant Nos. 61974176, 61574076, 61921005), Natural Science Foundation of Jiangsu Province (Grant Nos. BK20180330, BK20150055), and Fundamental Research Funds for the Central Universities (Grant Nos. 020414380122, 020414380084).

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  1. Wang C and Pan C have the same contribution to this work.

Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

    Cong Wang, Chen Pan, Shi-Jun Liang, Bin Cheng & Feng Miao

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  1. Cong Wang
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  2. Chen Pan
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  3. Shi-Jun Liang
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  4. Bin Cheng
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  5. Feng Miao
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Corresponding authors

Correspondence to Bin Cheng or Feng Miao.

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Wang, C., Pan, C., Liang, SJ. et al. Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure. Sci. China Inf. Sci. 63, 202402 (2020). https://doi.org/10.1007/s11432-019-2778-8

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  • DOI: https://doi.org/10.1007/s11432-019-2778-8

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