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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61434007) and 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, 100871, China

    Zhexuan Ren, Xia An, Gensong Li, Xing Zhang & Ru Huang

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  1. Zhexuan Ren
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  2. Xia An
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  3. Gensong Li
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  4. Xing Zhang
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  5. Ru Huang
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Correspondence to Xia An or Ru Huang.

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Ren, Z., An, X., Li, G. et al. Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci. China Inf. Sci. 64, 129401 (2021). https://doi.org/10.1007/s11432-019-2795-7

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  • DOI: https://doi.org/10.1007/s11432-019-2795-7

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