Conclusion
We fabricated and investigated the electrical characteristics of Ge pFinFET on (100)-oriented GeOI wafer. Transistors with fin channel along [110] direction demonstrate the improved drive current and channel ΔRtot/ΔLG compared to the devices along [100] direction. At a Qinv of 5 × 1012 cm−2, GeOI FinFETs along [110] direction have 60% and 10% improved μeff in comparison with [100] devices and Si university mobility, respectively.
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Acknowledgements
This work was supported by National Key Research and Development Project (Grant Nos. 2018YFB2200500, 2018YFB2202800) and National Natural Science Foundation of China (Grant Nos. 61534004, 61604112, 61622405, 61874081, 61851406).
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Liu, H., Han, G., Zhou, J. et al. High mobility germanium-on-insulator p-channel FinFETs. Sci. China Inf. Sci. 64, 149402 (2021). https://doi.org/10.1007/s11432-019-2846-9
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DOI: https://doi.org/10.1007/s11432-019-2846-9