Skip to main content
Log in

Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure

  • Letter
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2: 17033

    Article  Google Scholar 

  2. Lv Y W, Qin W J, Wang C L, et al. Recent advances in low-dimensional heterojunction-based tunnel field effect transistors. Adv Electron Mater, 2019, 5: 1800569

    Article  Google Scholar 

  3. Li X F, Gao T T, Wu Y Q. Development of two-dimensional materials for electronic applications. Sci China Inf Sci, 2016, 59: 061405

    Article  Google Scholar 

  4. Xie Q, Chen C, Liu M J, et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci China Inf Sci, 2019, 62: 062404

    Article  Google Scholar 

  5. Wu P, Ameen T, Zhang H R, et al. Complementary black phosphorus tunneling field-effect transistors. ACS Nano, 2019, 13: 377–385

    Article  Google Scholar 

  6. Wu C L, Huang R, Huang Q Q, et al. Design guideline for complementary heterostructure tunnel FETs with steep slope and improved output behavior. IEEE Electron Dev Lett, 2016, 37: 20–23

    Article  Google Scholar 

  7. Schlaf R, Lang O, Pettenkofer C, et al. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: charge transfer correction term for the electron affinity rule. J Appl Phys, 1999, 85: 2732–2753

    Article  Google Scholar 

  8. Huang Y, Sutter E, Sadowski J T, et al. Tin disulfidean emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. ACS Nano, 2014, 8: 10743–10755

    Article  Google Scholar 

  9. Liu W, Kang J H, Cao W, et al. High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance. Int Electron Dev Meet, 2013, 13: 499–502

    Google Scholar 

Download references

Acknowledgements

This work was partly supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61851401, 61421005, 61822401), National Science and Technology Major Project (Grant No. 2017ZX-02315001-004), and 111 Project (Grant No. B18001).

Author information

Authors and Affiliations

Authors

Corresponding authors

Correspondence to Qianqian Huang or Ru Huang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jia, R., Chen, L., Huang, Q. et al. Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure. Sci. China Inf. Sci. 63, 149401 (2020). https://doi.org/10.1007/s11432-019-9872-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11432-019-9872-x

Navigation